The invention provides an
infrared focal plane
chip which comprises a substrate, an
infrared sensitive layer, a reading circuit arranged on the substrate and
interconnection metal connected with the
infrared sensitive layer. An anti-reflection film is arranged in an n-type area of the infrared sensitive layer, a
metal layer which is not transparent to infrared light is arranged in a p-type area of the infrared sensitive layer, and the
metal layer is connected with a public
electrode through a lead. The invention also provides an infrared
focal plane detector. The invention also provides a preparation method of the infrared focal plane
chip. The
voltage deviation between the working points of the center pixel and the edge pixel Gpol can be reduced, so that the
imaging quality of the edge pixel of the
detector is improved. In addition,
equipotential metal is grown in a p-type area, the same
equipotential effect is achieved, the limitation that the front
equipotential machining technology is limited by a planar junction and the risk that
short circuit between the equipotential metal and pixels fails when a small pixel
chip is machined are avoided, the effects of enhancing electric signals through light and reducing optical
crosstalk can be achieved, and
detector sensitivity reduction caused by light blocking is avoided.