Infrared focal plane chip, preparation method thereof and infrared focal plane detector

Abstract

The invention provides an infrared focal plane chip which comprises a substrate, an infrared sensitive layer, a reading circuit arranged on the substrate and interconnection metal connected with the infrared sensitive layer. An anti-reflection film is arranged in an n-type area of the infrared sensitive layer, a metal layer which is not transparent to infrared light is arranged in a p-type area of the infrared sensitive layer, and the metal layer is connected with a public electrode through a lead. The invention also provides an infrared focal plane detector. The invention also provides a preparation method of the infrared focal plane chip. The voltage deviation between the working points of the center pixel and the edge pixel Gpol can be reduced, so that the imaging quality of the edge pixel of the detector is improved. In addition, equipotential metal is grown in a p-type area, the same equipotential effect is achieved, the limitation that the front equipotential machining technology is limited by a planar junction and the risk that short circuit between the equipotential metal and pixels fails when a small pixel chip is machined are avoided, the effects of enhancing electric signals through light and reducing optical crosstalk can be achieved, and detector sensitivity reduction caused by light blocking is avoided.

Description

technical field [0001] The invention relates to the field of chip technology, in particular to an infrared focal plane chip, an infrared focal plane detector and a preparation method of the infrared focal plane chip. Background technique [0002] The infrared detector chip is the "heart" part of the infrared detector, and its structure is as follows figure 1 shown. It mainly includes readout circuit 1, interconnection metal 3, infrared photosensitive layer 2 including p-n junction and array, and anti-reflection film 4 on the outermost surface, wherein the outermost part of the photosensitive material and the readout circuit is the common electrode area. Its working principle is: the photocurrent generated by the p-n junction of each pixel flows through the p-type material in the horizontal direction and reaches the 7 places of the common electrode on the outermost edge, and then reaches the common electrode of the readout circuit through the interconnected metal to realize ...

AI Technical Summary

Problems solved by technology

This method is only applicable to the material structure of planar junctions, and as the pixel spacing decreases (the current development direction of infrared), the risk of short circuit failure between pixels caused by equipotential lines increases greatly

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