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162results about How to "Inexpensively formed" patented technology

Method of manufacturing high strength glass fibers in a direct melt operation and products formed there from

A method of forming high strength glass fibers in a glass melter substantially free of platinum or other noble metal materials, products made there from and batch compositions suited for use in the method are disclosed. One glass composition for use in the present invention includes 50-75 weight % SiO2, 13-30 weight % Al2O3, 5-20 weight % MgO, 0-10 weight % CaO, 0 to 5 weight % R2O where R2O is the sum of Li2O, Na2O and K2O, has a higher fiberizing temperature, e.g. 2400-2900° F. (1316-1593° C.) and / or a liquidus temperature that is below the fiberizing temperature by as little as 45° F. (25° C.). Another glass composition for use in the method of the present invention is up to about 64-75 weight percent SiO2, 16-24 weight percent Al2O3, 8-12 weight percent MgO and 0.25-3 weight percent R2O, where R2O equals the sum of Li2O, Na2O and K2O, has a fiberizing temperature less than about 2650° F. (1454° C.), and a ΔT of at least 80° F. (45° C.). A forehearth for transporting molten glass from the glass melter to a forming position is disclosed. By using furnaces and / or forehearths substantially free of platinum or other noble metal materials, the cost of production of glass fibers is significantly reduced in comparison with the cost of fibers produced using a melting furnace lined with noble metal materials. High strength composite articles including the high strength glass fibers are also disclosed.
Owner:OWENS CORNING INTELLECTUAL CAPITAL LLC

Light transmitting conductive film, light transmitting electromagnetic wave shielding film, optical filter and method of producing display filter

A light transmitting conductive film formed by patterning a conductive metal part and a visible light transmitting part on a transparent support, wherein the conductive metal part is made up of mesh-forming thin lines of from 1 μm to 40 μm size and the mesh pattern continues for 3 m or longer. A method of producing a display filter wherein the end sections of at least two sides facing each other are in a mesh shape, which comprises using an electromagnetic wave shielding material (C), wherein a conductive layer (B) having the conductive parts being in the mesh shape of the geometric pattern is formed on one face of a polymer film (A) continuously in the machine direction of the polymer film (A), and cutting the mesh-like parts.
Owner:FUJIFILM CORP

Optical waveguide and method for producing same

An optical waveguide having a optical waveguide path capable of securing a high light propagation characteristic regardless of the type of a supporting base, provided with a multilayer circuit board, an optical waveguide path arranged on the multilayer circuit board, a light receiving element, IC chips, and a light emitting element, the optical waveguide path formed on a transparent substrate excellent in flatness and transferred to the multilayer circuit board. The light propagation loss becomes small, and a signal to be transmitted at a high speed being transmitted as a light signal and a signal which can be transmitted at a relatively low speed being transmitted as an electrical signal, whereby the signal propagation delay which becomes the problem when a signal is transmitted by only electrical wiring is overcome, and the influence of electromagnetic noise becomes small.
Owner:SONY GRP CORP

Crystalline multilayer structure and semiconductor device

Provided is a crystalline multilayer structure having good semiconductor properties. In particular, the crystalline multilayer structure has good electrical properties as follows: the controllability of conductivity is good; and vertical conduction is possible. A crystalline multilayer structure includes a metal layer containing a uniaxially oriented metal as a major component and a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component. The crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum and is uniaxially oriented.
Owner:FLOSFIA
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