The invention provides an LED
chip which comprises a substrate, a buffer layer, an N-type
semiconductor layer, a light-emitting layer partially covering the N-type
semiconductor layer, a P-type
semiconductor layer formed on the light-emitting layer, a P
electrode and an N
electrode, wherein the buffer layer, the N-type semiconductor layer, the light-emitting layer and the P-type semiconductor layer are formed on the substrate in sequence; the region, uncovered by the light-emitting layer, of the N-type semiconductor layer is an N
electrode installation region; the N electrode installation region is provided with a step; the step comprises a first step surface, a second step surface, the height of which is smaller than that of the first step surface, and a step side surface arranged between the first step surface and the second step surface; the P electrode is formed on the P-type semiconductor layer; and the N electrode is formed on the second step surface and is contacted with the step side surface. According to the LED
chip, a step structure is formed in the N electrode installation region, and the N electrode is formed on the step structure, so that compared with a conventional same-side-electrode-structure LED
chip, the LED chip in the invention, allowing the N electrode to be contacted with the side wall of the N-type semiconductor layer, enhances current transverse flow, improves
current distribution uniformity and effectively improves LED chip light-emitting performance.