LED chip and manufacturing method thereof

A technology of LED chips and steps, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as uneven current distribution of LED chips, and achieve the effects of improving luminous performance, enhancing lateral flow, and improving uniformity.

Inactive Publication Date: 2016-04-06
BYD CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to improve the defect of uneven current distribution of existing LED chips, the present invention provides an LED chip and a manufacturing method thereof, which can enhance the lateral flow of LED chip current, improve the uniformity of current distribution, and improve the luminous performance of the LED chip

Method used

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  • LED chip and manufacturing method thereof
  • LED chip and manufacturing method thereof
  • LED chip and manufacturing method thereof

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Embodiment Construction

[0012] In order to make the technical problems, technical solutions and beneficial effects solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0013] In describing the present invention, it is to be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation or position indicated by "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. The relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or ...

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Abstract

The invention provides an LED chip which comprises a substrate, a buffer layer, an N-type semiconductor layer, a light-emitting layer partially covering the N-type semiconductor layer, a P-type semiconductor layer formed on the light-emitting layer, a P electrode and an N electrode, wherein the buffer layer, the N-type semiconductor layer, the light-emitting layer and the P-type semiconductor layer are formed on the substrate in sequence; the region, uncovered by the light-emitting layer, of the N-type semiconductor layer is an N electrode installation region; the N electrode installation region is provided with a step; the step comprises a first step surface, a second step surface, the height of which is smaller than that of the first step surface, and a step side surface arranged between the first step surface and the second step surface; the P electrode is formed on the P-type semiconductor layer; and the N electrode is formed on the second step surface and is contacted with the step side surface. According to the LED chip, a step structure is formed in the N electrode installation region, and the N electrode is formed on the step structure, so that compared with a conventional same-side-electrode-structure LED chip, the LED chip in the invention, allowing the N electrode to be contacted with the side wall of the N-type semiconductor layer, enhances current transverse flow, improves current distribution uniformity and effectively improves LED chip light-emitting performance.

Description

technical field [0001] The invention belongs to the field of semiconductors, in particular to an LED chip and a manufacturing method. Background technique [0002] Light-emitting diode (LED) is a junction-type electroluminescent semiconductor device that can convert electrical signals into light signals. Gallium nitride-based light-emitting diodes, as solid-state light sources, are known for their high efficiency, long life, energy saving and environmental protection, and small size. Such advantages have become the focus of research and development and industry in the international semiconductor and lighting fields, and are mainly based on gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN) and indium aluminum gallium nitride (AlGaInN) The Group III-V nitride material has a continuously adjustable direct bandwidth of 0.7-6.2eV, covering the spectral range from ultraviolet light to infrared light, and is an ideal material for manufacturing ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/38H01L33/00
Inventor 谢春林
Owner BYD CO LTD
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