The invention discloses a three-layer heterojunction organic field-effect transistor memory and a fabrication method thereof. The memory comprises a substrate, wherein a source-drain electrode, an organic semiconductor heterojunction, a gate insulation layer and a gate electrode are sequentially arranged on the substrate from top to bottom, a polymer electret layer is arranged between the organicsemiconductor heterojunction and the gate insulation layer, the gate insulation layer covers a surface of the whole gate electrode and is used for isolating contact between the gate electrode and thepolymer electret layer, and the organic semiconductor heterojunction sequentially comprises a first hole transmission layer, an electron transmission layer and a second hole transmission layer from top to bottom. In the three-layer heterojunction organic field-effect transistor memory and the fabrication method thereof, provided by the invention, the polymer electret layer is fabricated on the gate insulation layer by a spinning method, morphology growth of the semiconductor heterojunction and the metal source-drain electrode is facilitated, the process is simple, the storage capacity, the current switch ratio and the storage speed can be greatly improved, the device fabrication cost is reduced, and promotion and application are convenient.