30results about How to "Expand the side area" patented technology

A structure of the front section of a vehicle body is disposed on the front end portion of a front side frame on the same position as the rear surface of a side stay in the front-rear direction of the vehicle body, and includes a first extending portion extending downward along the rear surface of the side stay. A lower stay is provided with a second extending portion extending outward in the vehicle width direction beyond the side stay to a position below the first extending portion. A joining section is formed so as to join the front surface of the first extending portion, the upper surface of the second extending portion, and outside surface of the side stay. The joining section defines an arrangement region for inner and outer shock absorbing members having a lower rigidity than the front side frame.

A capacitor structure is described, including a substrate, a first metal layer in the substrate, an etching stop layer on the substrate having therein an opening that exposes a portion of the first metal layer, a connection layer on the portion of the first metal layer, the sidewall of the opening and a portion of the etching stop layer, a second metal layer over the connection layer, and an insulating layer between the second metal layer and the connection layer.

The present application discloses a method for manufacturing a semiconductor device, comprising the steps of: forming a semiconductor substrate, a gate stack and a second protection layer in sequence on a first insulating layer; after defining a gate region and removing portions of the second protection layer and the gate stack outside the gate region, while keeping portions of the stop layer, the semiconductor layer and the second insulating layer which covers sidewalls of the patterned semiconductor layer outside the gate region and exposing the sacrificial layer, performing source / drain ion implementation in the semiconductor layer; after forming a second sidewall spacer so as to cover at least the exposed portion of the sacrificial layer, removing the first protection layer and the second protection layer so as to expose the semiconductor layer and the gate stack; and forming a contact layer on the exposed portion of the semiconductor layer and the gate stack; performing planarization so as to expose the first protection layer, and then removing the first protection layer, the sacrificial layer, the stop layer and the semiconductor layer with the first sidewall spacer and the second sidewall spacer as a mask, so as to form a cavity which exposes the first insulating layer. It facilitates reduction of short channel effects, resistance of source / drain regions, and parasite capacitance.

The invention relates to a metalizing polypropylene thin film capacitor, which is internally provided with two layers of single remaining edge evaporation polypropylene films which are mutually superimposed, wherein at least one layer of polypropylene film is superimposed on the non-superimposing surface of the at least one layer of single remaining edge evaporation polypropylene film; the single remaining edge evaporation polypropylene films comprise basal films and aluminium coating evaporated on the basal films; the spacing remained between one side of the aluminium coating and one side of the basal film is 0.4mm; the thickness of the basal film is 3mum to 12 mum; the capacitor has small sheet resistance, thickening film layer, increases withstanding voltage, and simultaneously, has augmented lateral area and contact surface of a metal spaying layer, stable exhaustion value and strong conducting fluid capacity; the distance of the remained edge is reduced, namely, aligning area of a polar plate is increased and the capacitance is amplified, while the capacitance volume ratio becomes smaller, the volume of the corresponding capacitor is reduced; therefore, the capacitor is suitable for being arranged in various small-sized electric equipment.

The invention provides a diameter-varied composite pile. The diameter-varied composite pile is characterized in that a diameter-varied pile body with increasing length and decreasing diameter from top to bottom is formed by 2 to 3 steel rebar concrete pile bodies; on the basis of the diameter-varied pile body, the periphery or the pile body of the diameter-varied pile body is formed in one of the following way or in the following combined ways of: (1) adding a group of cement soil piles around the diameter-varied pile body, (2) adding a carrier at the bottom end of the diameter-varied pile body and (3) adding a pulling-resistant carrier at the bottom end of the diameter-varied pile body. According to the diameter-varied composite pile, the crushing-resistant capacity, the pulling-resistant capacity, the bending-resistant capacity and shearing-resistant capacity are very strong and at the same time the building materials can be saved and the cost can be lowered; moreover, various combination ways are provided to meet different requirements of design and geology, so that the range of application is wide.

The invention discloses a method for growing controllable quantum dots and quantum rings, which comprises the steps: preparing a mu m-magnitude photolithography plate containing bar-shaped regions, square hole areas and round hole areas; performing ordinary photoetching on a patterned substrate of the photolithography plate; preparing the patterned substrate through wet etching; and adopting certain growth conditions and a molecular beam epitaxial (MBE) growth method of deposition amount to grow a quantum dot and quantum ring structure of which the density of the quantum dots is gradually smaller, the density of the quantum rings is gradually larger and the positions are controllable on the same substrate slice. The method is utilized to prepare the patterned substrates with different morphologies on different regions on the same substrate under same growth conditions by introducing a substrate treatment mode of the patterned substrates, thereby ensuring the morphologies and distribution of the quantum dots or the quantum rings formed on the plane are changed, and realizing the modulation of the density and distribution positions of the quantum dots and the quantum rings.

The invention provides an LED packaging structure which comprises a light emitting component and a transparent packaging adhesive body. The light emitting component includes an upper surface, and the transparent packaging adhesive body is arranged on the light emitting component and covers the upper surface. The transparent packaging adhesive body includes a top surface, a bottom surface and a first peripheral surface, wherein the top surface is opposite to the bottom surface, and the top surface is connected with the bottom surface via the first peripheral surface. The area of the first peripheral surface is four times the horizontal projection area of the upper surface or more.

The invention provides a filter convenient to use. The filter comprises a positioning plate and a filter screen, wherein a water outlet is formed in the positioning plate. The filter is characterizedin that the filter screen is cylindrical and arranged at the water outlet; a plurality of first water outlet holes are formed in the filter screen; a filter tube is arranged on the filter screen; a plurality of second water outlet holes are formed in the filter tube; the filter further comprises an indicating part, the indicating part comprises a handheld piece, a limiting piece for limiting the position of the handheld piece and a connecting column, the handheld piece is arranged above the filter tube, the limiting piece is arranged in the filter tube, a through hole is formed in the upper end surface of the filter tube, the connecting column penetrates through the through hole to be connected with the handheld piece and the limiting piece, density of each of the handheld piece, the limiting piece and the connecting column is smaller than that of water, when the filter screen is blocked by sundries such as hair and the like, water level in the filter screen is increased, the indicating part floats on the water and moves upwards along the through hole, then a user can judge that the filter screen is blocked, and meanwhile, the user can hold the handheld piece to take out the filter, so that the filter is more convenient to use.

The present invention provides a fuel cell capable of inhibiting desiccation and flooding of a membrane electrode assembly. The fuel cell has a laminated body having a membrane electrode assembly including an electrolyte membrane sandwiched by an anode catalyst layer and a cathode catalyst layer. A pair of separators sandwiches the laminated body, and between at least one separator and the laminated body, inlet and outlet passages are formed. The inlet passage is blocked at a downstream end of the reaction gas supplied to the laminated body and the outlet passage is blocked at an upstream end of the reaction gas having passed through the laminated body. The inlet passage and the outlet passage are arranged separately from each other. The depth of the upstream region of the inlet passage is larger than that of the downstream region of the inlet passage.

The invention discloses a complementary metal oxide semiconductor anti-latch structure which is composed of an N-type latch protection layers and a P-type latch protection layer. The N-type latch protection layer is composed of one or more of an N-type deep well, an N-type buried layer, an N well and an N-type diffusion region. The P-type latch protection layer is composed of one or more of a P-type deep well, a P-type buried layer, a P well and a P-type diffusion region. The N-type latch protection layer and the P-type latch protection layer are arranged into multiple groups and are cross-shaped. Compared with the exiting complementary metal oxide semiconductor anti-latch structure, the electrostatic protection turn-on voltage can be reduced, and the current discharge capability can be improved.

In the case of adjacent high voltage nodes in which one node is protected by a lateral BJT clamp, the irreversible burnout due to transient latch-up between the two adjacent high voltage pins of the structure is avoided by increasing the base contact region by including a sinker connected to the base.

The invention discloses a waste water treatment device for the production of biphenyl dichlorobenzyl, which relates to the technical field of sewage treatment, and comprises a support seat, the support seat has a cylindrical structure, and a treatment tank is arranged inside the support seat. And the peripheral outer wall of one end of the treatment tank is fixedly installed with an attached outer ring plate, and the attached outer ring plate and the supporting seat are rotatably connected by a sealed bearing. The assembly includes an inner end column that is rotatably connected to the center of the top of the treatment tank, and a cavity is provided at one end of the inner end column near the top; the present invention utilizes the set cavity, the connecting inclined tube and a plurality of spiral inner tubes, and can be added When the medicine is used, it is evenly added to both sides of the steady flow cylinder through multiple one-way valve tubes, which is conducive to the full mixing and reaction of the medicine and wastewater; the set steady flow cylinder and steady flow swing plate can play a good role in the flowing liquid The blocking effect allows the liquid to quickly level off.

The invention discloses a pulse metallic polypropylene film capacitor. The pulse metallic polypropylene film capacitor comprises a metal cylinder, a capacitor core, gold spraying layers, an upper insulation cover and a lower insulation cover, wherein the upper insulation cover and the lower insulation cover are fixedly connected by an explosion-prevention plate, a protection lead is arranged between the upper insulation cover and the explosion-prevention plate, an annular explosion-prevention gasket is arranged at each of the upper part and the lower part of the lower insulation cover, an impregnant is arranged in a gap between the metal cylinder and the lower insulation cover, the capacitor core is arranged in the metal cylinder, the gold spraying layers are arranged at the top end and the bottom end of the capacitor core, the capacitor core comprises a polypropylene film, the polypropylene film is evaporated with a metal layer in a high vacuum environment, and the metal layer comprises a wave-shaped double-sided metallic ZnAl layer, a first thickening layer and a second thickening layer. The pulse metallic polypropylene film capacitor has the advantages of excellent performance and high safety coefficient, and the capability of standing ripple current is high.

The invention discloses a double helix pipe for reinforcing soft soil, grouting pile forming equipment and a construction method thereof. The double helical tube includes an outer helical tube and an inner helical tube, the outer helical tube and the inner helical tube are nested and fixed together, the outer helical tube and the top of the inner helical tube are sealed and connected, and the inner helical tube The inner space of the helical tube constitutes a grouting cavity, the space between the outer helical tube and the inner helical tube forms a drainage and infusion cavity, and the body of the outer helical tube is provided with a plurality of drainage and infusion holes. The grouting pile forming equipment also includes a cabin box. The construction method for reinforcing weak soil by grouting pile forming equipment includes the following steps: 1) operation preparation; 2) forward spiral downward penetration; 3) drainage consolidation; 4) chemical consolidation; 5) reverse spiral upward ; 6) Repeat the operation until all the soils to be reinforced are processed. The invention has ingenious structure, simple and flexible operation, wide application range and high reliability.

The invention provides a light emitting diode encapsulation structure comprising a pedestal, a light emitting diode chip, a light transmitting layer and a wavelength conversion layer, wherein the pedestal is provided with a circuit layer; the light emitting diode chip is configured on the pedestal and electrically connected with the circuit layer; the light transmitting layer is configured on the pedestal; the wavelength conversion layer is positioned between the light emitting diode chip and the light transmitting layer and covers the light emitting diode chip; and the light transmitting layer is provided with a flat upper surface, and a side surface of the pedestal and the side surface of the light transmitting layer constitute the side surface of the light emitting diode encapsulation structure. The technical scheme of the light emitting diode encapsulation structure provided by the invention can achieve larger lateral luminous intensity and better optical uniformity, and can also achieve the effect of an area source.