48results about How to "Cost-effectively formed" patented technology

A high performance TMR sensor is fabricated by employing a composite inner pinned (AP1) layer in an AP2 / Ru / AP1 pinned layer configuration. In one embodiment, there is a 10 to 80 Angstrom thick lower CoFeB or CoFeB alloy layer on the Ru coupling layer, a and 5 to 50 Angstrom thick Fe or Fe alloy layer on the CoFeB or CoFeB alloy, and a 5 to 30 Angstrom thick Co or Co rich alloy layer formed on the Fe or Fe alloy. A MR ratio of about 48% with a RA of <2 ohm-um2 is achieved when a CoFe AP2 layer, MgO (NOX) tunnel barrier, and CoFe / NiFe free layer are used in the TMR stack. Improved RA uniformity and less head noise are observed. Optionally, a CoFe layer may be inserted between the coupling layer and CoFeB or CoFeB alloy layer to improve pinning strength and enhance crystallization.

A microphone sensing element and a method for making the same are disclosed. The sensing element has a diaphragm and an attached electrical lead-out arm preferably made of polysilicon that are separated by an air gap from an underlying backplate region created on a conductive silicon substrate. The backplate region has acoustic holes created by removing an oxide filling in a continuous trench that surrounds hole edges and by removing oxide to form the air gap. The diaphragm is softly constrained along its edge by an elastic element that connects to a surrounding rigid polysilicon layer. The elastic element is typically a polymer such as parylene having a Young's modulus substantially less than that of the diaphragm. First and second electrodes are connected to the diaphragm through the lead-out arm and to the substrate through polysilicon via fillings, respectively, and thereby establish a variable capacitor circuit for acoustic sensing.

An illuminated gauge for a vehicle instrument panel includes a single LCD having at least a first display configuration and a second display configuration different from the first display configuration. A pointer is selectively actuatable to operate within one of the first and the second display configurations. A selector is used to switch between the first and second display configurations.

A semiconductor structure suitable for micro-transfer printing includes a semiconductor substrate and a patterned insulation layer disposed on or over the semiconductor substrate. The insulation layer pattern forms one or more etch vias in contact with the semiconductor substrate. Each etch via is exposed. A semiconductor device is disposed on the patterned insulation layer and is surrounded by an isolation material in one or more isolation vias that are adjacent to the etch via. The etch via can be at least partially filled with a semiconductor material that is etchable with a common etchant as the semiconductor substrate. Alternatively, the etch via is empty and the semiconductor substrate is patterned to form a gap that separates at least a part of the semiconductor device from the semiconductor substrate and forms a tether physically connecting the semiconductor device to an anchor portion of the semiconductor substrate or the patterned insulation layer.