A high performance TMR sensor is fabricated by incorporating a
tunnel barrier having a Mg / MgO / Mg configuration. The 4 to 14 Angstroms thick lower Mg layer and 2 to 8 Angstroms thick upper Mg layer are deposited by a DC
sputtering method while the MgO layer is formed by a
NOX process involving
oxygen pressure from 0.1 mTorr to 1
Torr for 15 to 300 seconds.
NOX time and pressure may be varied to achieve a MR ratio of at least 34% and a RA value of 2.1
ohm-um2. The
NOX process provides a more uniform MgO layer than
sputtering methods. The second Mg layer is employed to prevent oxidation of an adjacent ferromagnetic layer. In a bottom
spin valve configuration, a Ta / Ru seed layer, IrMn AFM layer, CoFe / Ru / CoFeB pinned layer, Mg / MgO / Mg barrier, CoFe / NiFe free layer, and a cap layer are sequentially formed on a bottom shield in a read head.