54results about How to "Avoid simultaneous conduction" patented technology

An IGBT device, comprising a substrate having a conductivity type; a drain electrode arranged on a bottom surface of the substrate; an epitaxial layer arranged on the substrate and having a conductivity type opposite that of the substrate; at least one body diffusion arranged within the epitaxial layer and having a conductivity type the same as that of the substrate; at least one source diffusion arranged within the body diffusion and having a conductivity type the same as that of the epitaxial layer; a gate electrode to control the IGBT device; a source electrode electrically coupled to the body diffusion and the source diffusion; an additional diffusion arranged within the epitaxial layer and having a conductivity type the same as that of the substrate, the additional diffusion forming a collector region of a vertical bipolar arrangement in the IGBT; and a sense electrode electrically coupled to the additional diffusion; wherein the presence of minority carriers in the epitaxial layer may be detected in accordance with a voltage of the sense electrode.

A switching power supply unit of the present invention includes a timing generating circuit (121) which receives a first control signal formed by a rectifier-transistor driving circuit (104), forms a second control signal based on the first control signal, and supplies the second control signal to a control electrode of the rectifier transistor (113). The first control signal is synchronized with the switching operation of a half-bridge circuit (102), and the second control signal exceeds a threshold voltage of a rectifier transistor (113) at a timing substantially equal to the timing that one edge of the first control signal is generated and falls below the threshold voltage of the rectifier transistor (113) at a timing earlier by predetermined time than the timing that the other edge of the first control signal is generated.

In a self-excited generator 1 including an automatic voltage regulator (AVR) 10, a condensive load protection device includes: a field current control driver 21 which is connected to the field winding 6 in series and controlled to be ON / OFF by a drive circuit 23 of the AVR 10 to supply a field current to the field winding 6; and a condensive load protecting rotor short-circuit driver 22 which is connected in parallel to the field winding 6, and supplies a short-circuit current to the field winding 6 by being turned ON, and a bootstrap circuit 30 is connected as a drive power supply of the field current control driver and the condensive load protecting rotor short-circuit driver, and the bootstrap circuit 30 includes a capacitance portion 32 in which charges are accumulated when the field current control driver 21 is ON.

The invention discloses a simple pulse switch power supply PWM generation circuit and method. The PWM generation circuit comprises a resonance module, a dead zone time setting module and a shaping reverse module. The dead zone time setting module is electrically connected between the resonance module and the shaping reverse module. The resonance module is subjected to self-excited oscillation to generate square signals. After the square signals pass through the dead zone time setting module and the shaping reverse module in sequence, a first PWM pulse signal and a second PWM pulse signal which are used for driving bridge-wall-different MOS transistors of a pulse switch power supply respectively are obtained, the first PWM pulse signal and the second PWM pulse signal being the same in duty ratio and having set dead zones. The circuit is simple and high in cost performance; the circuit is in complete hardware implementation; the whole processing process does not need the intervention of control circuits such as CPU and the like; the circuit is high in reliability and effectively helps to solve the defects that in the prior arts, the size a chip is big and the number of pins is large; and the peripheral circuit of the circuit only has resonance module and the dead zone time setting module, so that the size of the pulse switch power supply is allowed to be minimized.

The invention discloses an abnormal protection circuit for an intelligent power module. The abnormal protection circuit comprises a first P-channel metal oxide semiconductor (PMOS) transistor 301, a first N-channel metal oxide semiconductor (NMOS) transistor 302, a lower bridge arm power supply 303, a first insulated gate bipolar transistor (IGBT) 304, a second PMOS transistor 305, a second NMOS transistor 306, an upper bridge arm power supply 307 and a second IGBT 308. A lower bridge arm driving signal LIN is connected with a gate of the first PMOS transistor 301, the gate of the first NMOS transistor 302 and an input end of the first abnormal protection circuit 309. A drain of the first PMOS transistor 301 is connected with the drain of the first NMOS transistor 302, and is also connected with the gate of the first IGBT 304 and the first and second output ends of the first abnormal protection circuit 309, and the point of the later connection is marked as LO. The abnormal protection circuit can timely discover the abnormality an IGBT gate connecting line and timely switch the IGBT off, and has the characteristics of simple and rational structure, operational flexibility, high degree of safety and wide application range.