A technique for fabricating a resistor on a flexible substrate (10) (28). Specifically, at least a portion of a polyimide substrate (10) (28) is activated by exposure to a ion sputter etch techniques. A metal layer (14) (36) is depositing over the activated portion (12) (34) of the substrate (10) (28), thereby resulting in the formation of a highly resistive metal-carbide region (16) (38). Interconnect layers (18, 20) (40, 42) are deposited over the metal-carbide region (16) (38) and patterned to form terminals (24, 26) (44, 46) at opposite ends of the metal carbide region (l6) (38). The metal-carbide region (16) (38) is patterned to form a resistor between the terminals. Alternatively, only a selected area of the polyimide substrate (10) (28) is activated. The selected area forms the area in which the metal-carbide region (16) (38) is formed. Interconnect layers (18, 20) (40, 42) are disposed over the metal-carbide region (16) (38) and patterned to form terminals (24, 26) (44, 46) at opposite ends of the metal-carbide region (16) (38).