59 results about "Visible light sensing" patented technology

A digital camera having a single image sensor made up of an array of filtered photosites used to capture non-visible light wavelengths in addition to the standard red / green / blue (RGB) or other visible light intensity values is presented. Essentially, this is accomplished using a separate filter disposed over each photosite that exhibits a light transmission function with regard to wavelength which passes only a prescribed range of wavelengths—some passing light in the visible light spectrum and others in the non-visible light spectrum. The photosites passing non-visible light wavelengths can be configured to pass light in the infrared (IR) light spectrum, which can be limited to just the near infrared (NIR) spectrum if desired, or alternately light in the ultra-violet (UV) light spectrum.

A display panel that includes: a substrate, a sensing transistor disposed on the substrate, and a readout transistor connected to the sensing transistor and transmitting a detecting signal is presented. The sensing transistor includes a semiconductor layer disposed on the upper substrate, a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode overlapping the semiconductor layer on the source electrode and the drain electrode. Accordingly, in a display device and a manufacturing method thereof, an infrared sensing transistor, a visible light sensing transistor, and a readout transistor are simultaneously formed with a top gate structure such that the number of manufacturing processes and the manufacturing cost may be reduced.

An optical sensor includes an image sensor, a proximity sensor and a visible light sensor. The image sensor includes a first pixel and a second pixel. The first pixel is coated with a first optical film for blocking light whose wavelength is outside a first predetermined range and a second optical film for blocking light whose wavelength is outside a second predetermined range. The proximity sensor generates an IR signal according to a first exposure value. The visible light sensing unit generates a visible light signal according to the difference between the first exposure and a second exposure value or according to a ratio of the first exposure value to the second exposure value. The first exposure value represents an incident light quantity which is absorbed by the first pixel. The second exposure value represents an incident light quantity which is absorbed by the second pixel.

A sensor for sensing environmental characteristics of a space may include a visible light sensing circuit for recording an image of the space and a control circuit responsive to the visible light sensing circuit. The control circuit may detect an occupancy or vacancy condition in the space in response to the visible light sensing circuit, and measure a light level in the space in response to the visible light sensing circuit. The control circuit may also include a low-energy occupancy sensing circuit for detecting an occupancy condition in the space. The control circuit may disable the visible light sensing circuit when the space is vacant. The control circuit may detect an occupancy condition in the space in response to the low-energy occupancy sensing circuit and subsequently enable the visible light sensing circuit. The visible light sensor may be configured in a way that protects the privacy of the occupants of the space.

The present invention relates to a digital device capable of obtaining both a color image and a depth image and a method of processing a three dimensional image using the same. The method can include the steps of switching a resolution of a light-receiving unit from a first resolution to a second resolution which is lower than the first resolution, sensing a visible light and an infrared light from a prescribed subject, extracting color image information from the visible light sensed by a first sensing unit of the light-receiving unit during a first time, extracting depth image information from the infrared light sensed by a second sensing unit of the light-receiving unit during a second time, determining whether extraction of both the color image information and the depth image information for the subject is completed and if the extraction of the color image information and the extraction of the depth image information for the subject are completed, implementing a 3D image of the subject based on the extracted color image information and the depth image information.

The invention discloses an image sensor. Compared with an existing image sensor, due to the fact that an existing visible light sensing unit in a Bayer format is reserved in a center area of a light sensing unit array and an infrared light sensing unit is added in the marginal area, the intensity of infrared light and the intensity of the visible light can be obtained through only one two-way light filter, and the cost of the light filter and a switching mechanism is reduced. In the daytime, the intensity of the visible light and the intensity of the infrared light can be worked out by means of the light sensing unit in the center area and the light sensing unit in the marginal area, so that the color accuracy of a daytime image is ensured; at night, the light sensing unit in the center area can receive the energy of the visible light and the energy of the infrared light at the same time, and the night image brightness is increased. In addition, due to the fact that the infrared light sensing unit is arranged on the marginal area of the light sensing unit array, compared with the existing image sensor, the positions of redundant light sensing units on the periphery of the image sensor are just utilized, and the area of the image sensor will not be increased.

The invention discloses a double-inductor infrared camera and a control method thereof. The double-inductor infrared camera comprises a lens group, a semi-reflecting semi-permeating lens, a visible light inductor, an infrared inductor, a control module, a visible light filter, an infrared light filter, a memorizer and a luminance inductor. The invention further discloses a double-inductor infrared camera control method which comprises the following steps: (1) acquiring ambient light illumination A; (2) judging whether the ambient light illumination A is larger than a given threshold A0, entering the step (3) if the ambient light illumination is larger than the given threshold A0, and entering the step (4) if the ambient light illumination is not larger than the given threshold A0; (3) closing the infrared inductor, and opening the visible light inductor; (4) closing the visible light inductor, and opening the infrared inductor. According to the double-inductor infrared camera and the control method, a semi-reflecting semi-permeating structure is applied in the infrared camera to achieve uniformity of monitoring visual fields; and a double-inductor structure is adopted, two inductors are driven through switching and are enabled to work in an intersection mode so that intersected receiving of visible light and infrared light images is realized, and complex calculation processes brought by simultaneous receiving of two kinds of light are avoided.

The invention provides a touch-control panel and a touch sensing method and a display device applied. The touch panel comprises a substrate, a pixel, a visible light sensing element and an invisible light sensing element. The pixel is formed on the substrate, the visible light sensing element is arranged in the pixel for sensing visible light, and the invisible light sensing element is arranged in the pixel for sensing invisible light. The invention can avoid the situation of misjudge and can be applied in the environment of low light intensity or dark state.

The invention provides a ternary bismuth-based composite photocatalyst Bi / Bi4O5Br2 / BiOI, and a preparation method thereof, which relate to the technical field of semiconductor photocatalytic materials. The preparation method of the ternary bismuth-based composite photocatalyst Bi / Bi4O5Br2 / BiOI comprises the steps of dissolving a bismuth-containing compound, iodate and bromine into ethylene glycol,adjusting a pH value of a solution to 8 to 10, and carrying out hydrothermal reaction. The method is simple in preparation process, low in cost, free of producing toxic and harmful byproducts, and easy for industrial production. The ternary bismuth-based composite photocatalyst Bi / Bi4O5Br2 / BiOI is prepared by the preparation method. The catalyst has better visible light induction capability and pollutant degradation capability, and the utilization rate of solar energy is improved during a catalytic process.

The invention provides an image sensing device with a high dynamic range. The device includes an array of Bayer pattern units. Each of the Bayer pattern units comprises a plurality of pixels and eachof the plurality of pixels comprises a plurality of photodiodes. At least one of the plurality of photodiodes in each pixel is configured to detect near infrared (NIR) light and at least one of the plurality of photodiodes in each of the plurality of pixels is configured to detect visible light. At least two photodiodes have different integral times and each photodiode is provided with a micro lens which can guide incident light to the corresponding photodiode. The device also comprises an array of optical filter combinations. Each of the optical filter combinations may correspond to a pixel and the multiple photodiodes thereof and has at least two different filters, and at least two photodiodes corresponding to each optical filter are corresponding to different integral times. The devicecan integrate the times-domain HDR function with minimized motion artifact and multiple integral times and can be applied to visible light sensing, non-visible light sensing and the combination thereof to acquire HDR images with improved quality.

The invention discloses a photoelectric conversion circuit used for a visible light sensor chip. The photoelectric conversion circuit mainly solves the problem that in the prior art, visible light sensing accuracy is influenced by dark current noise. The photoelectric conversion circuit comprises a photoelectric diode array (1), a dark current photoelectric diode array (2) and a noise filtering circuit (3). The number of diodes, connected into the circuit actually, of the photoelectric diode array and the number of diodes, connected into the circuit actually, of the dark current photoelectric diode array are controlled through external control logic. The first input end of the noise filtering circuit is connected with the output end of the photoelectric diode array, the second input end of the noise filtering circuit is connected with the output end of the dark current photoelectric diode array, subtraction is performed on light currents generated by the photoelectric diode array and containing dark currents and dark currents generated by the dark current photoelectric diode array through the noise filtering circuit so as to obtain visible light currents without the dark currents, and the visible light currents are output to an external charge balance type analog-to-digital conversion circuit. The photoelectric conversion circuit improves the photoelectric conversion accuracy, restrains influences on visible light sensing results of the dark current noise, and improves the visible light sensing accuracy.

The invention discloses an image sensor, a depth data measuring head provided with the image sensor and a depth data measuring system provided with the image sensor. The image sensor comprises a lensunit, a beam splitting device, a visible light sensing unit and an infrared light sensing unit, wherein the lens unit is used for receiving an incident light; the beam splitting device is used for splitting the incident light into a visible light beam and an infrared light beam; the visible light sensing unit is used for detecting a visible light within a special visible light frequency range fromthe visible light beam; and the infrared light sensing unit is used for detecting an infrared light within a special infrared light frequency range from the infrared light beam. With the introduced beam splitting device, particularly a square prism for reflecting the infrared light, the image sensor provided by the invention can realize separation of an infrared light constituent and a visible light constituent and pixel-level alignment of imaging through very simple setting. The image sensor can be used in various monocular and binocular measuring heads, and can preferably cooperate with a visible light protection device to improve window matching accuracy through multiple sets of projected textures.

The invention provides a pixel structure of a dual-layer visible / infrared hybrid imaging detector and a fabrication method of the pixel structure. The pixel structure comprises a substrate, a visible sensing region, a metal interconnector and an infrared sensing region, wherein the visible sensing region is arranged on the lower surface of the substrate, the infrared sensing region is arranged on the upper surface of the substrate and comprises a first infrared sensing structure, a second infrared sensing structure, a contact groove structure, a support part and a dielectric layer, the first infrared sensing structure is arranged on the dielectric layer, the first infrared sensing structure and the second infrared sensing structure both are connected with the contact groove structure, the contact groove structure is connected with the metal interconnector, an electric signal formed by the first infrared sensing structure and the second sensing structure is transmitted to the metal interconnector through the contact groove structure, a first cavity is arranged in the substrate below the first infrared sensing structure, a second cavity is arranged between the second infrared sensing structure and the first infrared sensing structure, a third cavity is arranged between the support part and the second infrared sensing structure, and a fourth cavity is arranged in the substrate below the dielectric layer provided with a fourth releasing hole.

The invention provides a visible-light infrared mixed imaging detector pixel structure and a manufacturing method thereof. The structure comprises a wafer served as a light filtering layer, a visible light sensing area, an external-connection circuit, a dielectric layer and an infrared sensing area. The infrared sensing area comprises an infrared sensing component, an electrode layer, an upper release protection layer; a plurality of through holes, a support component and a seal-capping material layer, wherein a release protection layer bottom located in an electrode layer pattern is contacted with an infrared sensing component top and a contact portion possesses a first release hole; a first cavity is located below the first release hole; the plurality of through holes are located below an edge of the electrode layer; a dielectric layer of a through hole outer side possesses a second release hole; a second cavity is located below the second release hole; a top of the support component possesses a third release hole, an internal surface of the support component possesses an infrared reflective material or the whole support component is the infrared reflective material; and a third cavity is located between the support component and the infrared sensing area.

The invention provides a Bi5O7I nano sheet-shaped material, as well as a preparation method and application thereof, and relates to the technical field of semiconductor photocatalytic materials. The preparation method comprises: dissolving a bismuth-containing compound and iodide salt in ethylene glycol, adjusting the pH of the solution to 8-10, and performing hydrothermal reaction. The method issimple in preparation process, low in cost, strong in controllability, and suitable for large-scale production. The Bi5O7I nano sheet-shaped material is prepared from the preparation method of the Bi5O7I nano sheet-shaped material, and has good visible light sensing capacity and phenolic pollutant degrading capacity.

The invention provides an adjustable hybrid imaging detector pixel structure and a preparation method thereof. According to the adjustable hybrid imaging detector pixel structure and the preparation method thereof of the invention, a visible light induction region and an infrared induction region are integrated in a chip; the infrared induction region includes an infrared window material which is located at the upper surface of a semiconductor substrate and is used for selectively transmitting infrared light of desired bands, interconnection layers which are arranged at two sides of the infrared window material and are located at the upper surface of the semiconductor substrate, a dielectric layer which is located at the upper surfaces of the infrared window material and the interconnection layers, an infrared induction structure which is provided with a first middle arching part and first end portion supporting parts, and a supporting component which is arranged around the infrared induction structure; contact trench structures located at two sides above the infrared window material are formed in the dielectric layer; the first middle arching part is located a corresponding position just above the infrared window material; a first cavity is formed between the first middle arching part and the dielectric layer; and the electrode layers of the first end portion supporting parts contact with the contact trench structures.

The invention provides a backside illuminated hybrid imaging detector pixel structure and a preparation method thereof. A visible light induction area and an infrared induction area are integrated into a chip; a semiconductor substrate is adopted as a visible light filter layer; and the visible light filter layer does not need to be additionally arranged, so that the size of a device is reduced; the processing step is reduced; and the cost is reduced. A dielectric layer and an isolation layer below an infrared induction structure are removed to form a hollow area; a first cavity is formed between the hollow area and the infrared induction structure; and the infrared light which is filtered by the semiconductor substrate does not need to pass through other materials. Therefore, the loss of the infrared light is avoided; the imaging quality of the infrared induction component is improved; and infrared hybrid imaging miniaturization and chipping of the visible light become possible.

The invention provides a hybrid imaging detector chip based on a semiconductor integrated circuit CMOS process. The chip comprises a substrate, a visible light sensing area located at the bottom of the substrate, CMOS reading circuits located on the two sides of the visible light sensing area, a suspended upper micro-bridge structure and a suspended lower micro-bridge structure which are both located at the top of the substrate, an air gap transistor formed between the lower micro-bridge structure and the substrate, an upper electric connection supporting structure, an upper snakelike beam structure, and a voltage variable resistor which is located at the contact position of the upper snakelike beam structure and the upper electric connection supporting structure. A diode is arranged in the visible light sensing area, and when the lower micro-bridge structure absorbs infrared light and shifts up and down to change the air gap height of the air gap transistor, the source-drain current of the air gap transistor is changed, so the induction of visible light and infrared light is realized.

The invention discloses a camera module and electronic equipment. The camera module comprises an image sensor which comprises a substrate, and a plurality of visible light sensing units and a plurality of infrared light sensing units which are uniformly arranged on the substrate; a first light-transmitting structure which covers the image sensor; a laser emitter which is arranged on one side of the image sensor and used for emitting light rays outwards, wherein the infrared light sensing units are used for receiving the light rays reflected by an obstacle and determining the focusing distance according to the light rays. According to the invention, the visible light sensing units and the infrared light sensing units are integrated in the image sensor at the same time, the problem that in the prior art, extra space is needed for arranging a laser focusing sensor can be effectively solved, and moreover, the overlapping degree of the field angles of the visible light sensing units in a laser focusing sensor and the image sensor can be improved; therefore, the accuracy of a focusing point is improved, and the focusing requirement of a user when the camera module is used for shooting is better met.

The invention belongs to the technical field of visible light detection and particularly relates to an expressway giant advertising board intelligent lighting energy-saving control device and method. The device comprises a lens set and a visible light sensing energy-saving control device which further comprises a power supply management module, a relay, an LED lamp set, a double-element visible light illuminance detection circuit, a level switching circuit and a monostability multiple trigger circuit. The visible light sensing energy-saving control device is small in size, low in cost and convenient to mount, the double-element visible light detection circuit composed of two light dependent resistors and an inverse-phase band-pass filtering amplifying circuit is used in an innovative mode for detecting environment illuminance changing caused by vehicle lamp lighting when a vehicle passes by, interference on detection from environment illuminance and external radio frequency signals is avoided, and whether the vehicle passes by can be effectively judged.

The invention provides a hybrid imaging detector picture element structure for strengthening infrared permeability and a preparation method of the hybrid imaging detector picture element structure. A visible light induction area and an infrared induction area are integrated into a chip. Through forming an infrared anti-reflection material with a smooth convex surface on a wafer surface below an infrared induction component and above a visible light induction component, and filtering visible light by the wafer, the ratio of infrared light entering a micro-bridge structure can be improved, so that the imaging quality of the infrared induction component is improved; visible and infrared hybrid imaging micromation and chip become possible.

The invention relates to an elevator car, an operation control method and an elevator. The elevator car includes a car body, a visible light induction device, a weighing detection device and a measuring and calculating control device; the car body is used for transferring loads; the visible light induction device is arranged on the car body and is used for detecting a space occupied by the loads in the car body and correspondingly outputs induction signals; the weighing detection device is arranged on the car body and is used for detecting weight data of the loads in the car body; and the measuring and calculating control device is correspondingly connected with the visible light induction device and the weighing detection device in a communication mode and is used for obtaining space occupation data of the car body by statistics according to the induction signals, and is used for controlling a running state of the car body according to the space occupation data and the weight data. Byinstalling the visible light induction device in the car body, cooperative work with the weighing detection device and the measuring and calculating control device is realized, the load and space detection of the car body are realized, and the efficiency of load detection is improved.

The invention provides a method for detecting the action information, a light sensing array, and an image sensor. The method comprises the following steps: providing the light sensing array which is used for detecting an image of a to-be-detected object in a first distance range or a second distance range, wherein the light sensing array comprises a plurality of invisible light sensing pixels anda plurality of visible light sensing pixels; employing the invisible light sensing pixels for image detection in the first distance range, so as to obtain a plurality of invisible light images; employing the visible light sensing pixels for image detection in the second distance range, so as to obtain a plurality of visible light images; processing the invisible and visible light sensing images through a processing unit, so as to obtain the action information of the to-be-detected object. The method solves a problem that a gesture recognition system just can achieve the detection of a short-distance gesture image or a long-distance gesture image and cannot achieve the simultaneous detection of the short-distance and long-distance gesture images when the gesture recognition system is used for detecting gesture images.

The invention relates to an illumination control system based on a photosynthetically effective value sensor, and the system comprises a sensor module; a control center which is used for receiving a photosynthetically effective radiation value and generating and transmitting a lamp control signal according to the photosynthetically effective radiation value; and a lamp which receives the lamp control signal and illuminates according to the lamp control signal. The sensor module comprises a visible light sensing unit which is used for converting the collected light with a wavelength range of 400 nm and 700 nm into an electric signal; a micro-control unit which is connected with the visible light sensing unit and is used for calculating a photosynthetically active radiation value according to the electric signal; and a wireless transmission unit which is connected with the micro-control unit and is used for wirelessly transmitting the photosynthetically active radiation value. Accordingto the present invention, the illumination of the lamp is controlled by sensing the photosynthetically active radiation value within the optical wavelength range of 400nm-700nm required by the photosynthetic reaction of the plants, so that the closed-loop control of the illumination condition required by the growth of the plants is realized, and the illumination condition really required by the growth of the plants can be provided.

The invention provides a dual-layer hybrid imaging detector pixel structure capable of increasing transmissivity and a preparation method thereof. The dual-layer hybrid imaging detector pixel structure comprises a substrate, a visible light induction region located at the lower surface of the substrate, a metal interconnection structure and an infrared induction region located at the upper surface of the substrate; the infrared induction region includes a first infrared induction structure, a second infrared induction structure, a contact trench structure, a supporting component and a dielectric layer; the first infrared induction structure and the second infrared induction structure are both connected with the contact trench structure; the contact trench structure is connected with the metal interconnection structure; electric signals formed by the first infrared induction structure and the second infrared induction structure are transmitted to the metal interconnection structure through the contact trench structure; a first cavity located below the first infrared induction structure is formed in the substrate; a second cavity is formed between the second infrared induction structure and the first infrared induction structure; a third cavity is formed between the supporting component and the second infrared induction structure; first release holes are formed in the first infrared induction structure; and second release holes are formed at the top of the supporting component.

A fully-functional online water quality monitor comprises a pipeline. The water inlet end of the pipeline is connected to an external water pipe, the pipeline is provided with an electric field inducing area and an ultraviolet visible light sensing area along the water flow direction, the electric field inducing area comprises a positive plate and a negative plate which are arranged in the pipeline parallelly and oppositely and extend along the water flow direction, and the ultraviolet visible light sensing area comprises an ultraviolet visible light sensor and an ultraviolet visible light source which are arranged on the outer side of the pipeline oppositely. The fully-functional online water quality monitor is capable of monitoring change of various pollutants in water accurately and rapidly and alarming in real time, and is simple in structure, easy to implement, low in cost, accurate in measurement and alarming and capable of measuring various pollutants in water simultaneously, so that fully-functional rapid monitoring is achieved.