Backside illuminated hybrid imaging detector pixel structure and preparation method thereof

An imaging detector and pixel structure technology, applied in the field of microelectronics, can solve the problems of large alignment deviation between the infrared image part and the visible light image part, affecting the imaging quality, etc., to avoid loss, improve imaging quality, and reduce device volume Effect

Active Publication Date: 2015-12-23
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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Problems solved by technology

[0003] However, in the existing hybrid imaging devices, lenses are used to form two optical paths to sense and image visible light and infrared light respectively, and finally a computer processing system is used to synthesize them together. Due to the separation of the optical paths, the formed infrared image part and visible light image Some of them have large alignment deviations, which seriously affect the imaging quality

Method used

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  • Backside illuminated hybrid imaging detector pixel structure and preparation method thereof
  • Backside illuminated hybrid imaging detector pixel structure and preparation method thereof

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[0040] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0041] The pixel structure of the back-illuminated visible light and infrared hybrid imaging detector of the present invention includes: a semiconductor substrate as a visible light filter layer; a visible light sensing region located on the upper surface of the semiconductor substrate, the visible light sensing region includes visible light sensing components and The extraction pole; the groove formed in the semiconductor substrate below the visible light sensing area, through which the bottom of the visible light sensing area is exposed; the metal interconnection ...

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Abstract

The invention provides a backside illuminated hybrid imaging detector pixel structure and a preparation method thereof. A visible light induction area and an infrared induction area are integrated into a chip; a semiconductor substrate is adopted as a visible light filter layer; and the visible light filter layer does not need to be additionally arranged, so that the size of a device is reduced; the processing step is reduced; and the cost is reduced. A dielectric layer and an isolation layer below an infrared induction structure are removed to form a hollow area; a first cavity is formed between the hollow area and the infrared induction structure; and the infrared light which is filtered by the semiconductor substrate does not need to pass through other materials. Therefore, the loss of the infrared light is avoided; the imaging quality of the infrared induction component is improved; and infrared hybrid imaging miniaturization and chipping of the visible light become possible.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a back-illuminated visible light and infrared hybrid imaging detector pixel structure and a preparation method thereof. Background technique [0002] With the development of industry and living standards, pure infrared imaging or pure visible light imaging can no longer meet the demand. Imaging technologies with wider wavelength bands have attracted more and more attention, especially imaging technologies that are sensitive to visible light and infrared light at the same time. [0003] However, in existing hybrid imaging devices, lenses are used to form two optical paths to sense and image visible light and infrared light respectively, and finally a computer processing system is used to synthesize them together. Due to the separation of the optical paths, the formed infrared image part and visible light image Some of them have large alignment deviations, which seriously ...

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Application Information

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IPC IPC(8): H01L27/146H01L31/09B81B7/02
CPCB81B7/02H01L27/146H01L31/09
Inventor 康晓旭
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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