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Pixel structure of dual-layer visible/infrared hybrid imaging detector and fabrication method of pixel structure

An imaging detector and pixel structure technology, which is applied in the field of microelectronics, can solve problems such as affecting imaging quality, large alignment deviation of infrared image parts and visible light image parts, etc., to reduce process steps, improve hybrid imaging quality, and reduce losses. Effect

Active Publication Date: 2015-12-16
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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Problems solved by technology

[0003] However, in the existing hybrid imaging devices, lenses are used to form two optical paths to sense and image visible light and infrared light respectively, and finally a computer processing system is used to synthesize them together. Due to the separation of the optical paths, the formed infrared image part and visible light image Some of them have large alignment deviations, which seriously affect the imaging quality

Method used

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  • Pixel structure of dual-layer visible/infrared hybrid imaging detector and fabrication method of pixel structure
  • Pixel structure of dual-layer visible/infrared hybrid imaging detector and fabrication method of pixel structure

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[0040] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0041] The pixel structure of the double-layer visible light and infrared hybrid imaging detector of the present invention includes: a semiconductor substrate as a visible light filter layer; a visible light sensing area located on the lower surface of the semiconductor substrate, and the visible light sensing area includes a visible light sensing part and an extraction pole The metal interconnection and the infrared sensing area located on the upper surface of the semiconductor substrate; the infrared sensing area includes a double infrared sensing structure; the i...

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Abstract

The invention provides a pixel structure of a dual-layer visible / infrared hybrid imaging detector and a fabrication method of the pixel structure. The pixel structure comprises a substrate, a visible sensing region, a metal interconnector and an infrared sensing region, wherein the visible sensing region is arranged on the lower surface of the substrate, the infrared sensing region is arranged on the upper surface of the substrate and comprises a first infrared sensing structure, a second infrared sensing structure, a contact groove structure, a support part and a dielectric layer, the first infrared sensing structure is arranged on the dielectric layer, the first infrared sensing structure and the second infrared sensing structure both are connected with the contact groove structure, the contact groove structure is connected with the metal interconnector, an electric signal formed by the first infrared sensing structure and the second sensing structure is transmitted to the metal interconnector through the contact groove structure, a first cavity is arranged in the substrate below the first infrared sensing structure, a second cavity is arranged between the second infrared sensing structure and the first infrared sensing structure, a third cavity is arranged between the support part and the second infrared sensing structure, and a fourth cavity is arranged in the substrate below the dielectric layer provided with a fourth releasing hole.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a pixel structure of a double-layer visible light and infrared hybrid imaging detector and a preparation method thereof. Background technique [0002] With the development of industry and living standards, pure infrared imaging or pure visible light imaging can no longer meet the demand. Imaging technologies with wider wavelength bands have attracted more and more attention, especially imaging technologies that are sensitive to visible light and infrared light at the same time. [0003] However, in existing hybrid imaging devices, lenses are used to form two optical paths to sense and image visible light and infrared light respectively, and finally a computer processing system is used to synthesize them together. Due to the separation of the optical paths, the formed infrared image part and visible light image Some of them have large alignment deviations, which seriously...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L31/09H01L31/02B81B7/02H01L27/00
CPCH01L27/146H01L27/14601H01L27/14634H01L27/14683H01L31/09
Inventor 康晓旭
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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