32 results about "Tem analysis" patented technology

An improved method and apparatus for S / TEM sample preparation and analysis. Preferred embodiments of the present invention provide improved methods for TEM sample creation, especially for small geometry (<100 nm thick) TEM lamellae. A novel sample structure and a novel use of a milling pattern allow the creation of S / TEM samples as thin as 50 nm without significant bowing or warping. Preferred embodiments of the present invention provide methods to partially or fully automate TEM sample creation, to make the process of creating and analyzing TEM samples less labor intensive, and to increase throughput and reproducibility of TEM analysis.

A method of fabricating sample lamella for transmission electron microscopy (TEM) analysis is provided. A waiting-examination sample having an analysis target on the top surface of that is offered, and at least a mark around the analysis target is defined. A covering layer is covered on the top surface of waiting-examination sample. A holder is attached on the covering layer. A backside polishing process is performed to remove a portion of the waiting-examination sample until the mark is visible under the optical microscopy from the bottom surface of waiting-examination sample. An in-situ lift-out step is performed to pick up a thin membrane containing the analysis target and serve as the sample for TEM analysis.

A TEM (transmission electron microscopy) analysis method using FIB (focused ion beam) includes dividing a TEM sample into a plurality of analysis regions; determining an FIB beam current for each of the analysis regions; and performing FIB milling on each of the analysis regions by using the determined FIB beam current. Further, the method includes loading the TEM sample onto a TEM sample grid and transmitting a TEM electron beam on the TEM sample to perform the TEM analysis.

Methods and assemblies for the construction of liquid-phase alloy nanoparticles are presented. Particle formation is directed by molecular self-assembly and assisted by sonication. In some embodiments, eutectic gallium-indium (EGaIn) nanoparticles are formed. In these embodiments, the bulk liquid alloy is ultrasonically dispersed, fast thiolate self-assembly at the EGaIn interface protects the material against oxidation. The assembly shell has been designed to include intermolecular hydrogen bonds, which induce surface strain, assisting in cleavage of the alloy particles to the nanoscale. X-ray diffraction and TEM analyses reveal that the nanoscale particles are in an amorphous or liquid phase, with no observed faceting.

The invention provides a preparation method of an inspection sample of a semiconductor device, and the preparation method specifically comprises the following steps: providing a sheet-shaped inspection sample, and exposing a first to-be-detected cross section in the vertical direction of a to-be-detected semiconductor device on the observed transverse surface of the sheet-shaped inspection sample;forming protective layers on the two sides of the sheet-shaped test sample corresponding to the to-be-detected semiconductor device so as to longitudinally coat the sheet-shaped test sample; and longitudinally cutting the sheet-shaped test sample coated with the protective layers to obtain a columnar test sample, the observed longitudinal surface of the columnar test sample exposing a second to-be-tested cross section, perpendicular to the first to-be-tested cross section, of the to-be-tested semiconductor device in the vertical direction. According to the preparation method, accurate fixed-point and ultrathin sample preparation in two directions can be carried out on the same chip sample so that TEM analysis can be carried out on the to-be-detected sample in the two directions, and greathelp is provided for analysis of complex structures and complex defects.

An improved method for extracting and handling multiple samples for S / TEM analysis is disclosed. Preferred embodiments of the present invention make use of a micromanipulator that attaches multiple samples at one time in a stacked formation and a method of placing each of the samples onto a TEM grid. By using a method that allows for the processing of multiple samples, the throughput of sample preparation is increased significantly.

The invention provides a preparation method of a TEM analysis sample. A metal wire in a contact hole structure which is in bridge connection with one side with defects and a contact hole structure on the other side are removed in a process of forming a sample, so that the problem that a bridge connection defect image is shielded by a relatively dark metal wire image when bridge connection defects are observed in the Y direction is avoided.

The invention provides a preparation method of a planar TEM sample. The method comprises the steps of: preparing a sample, enabling the cross section of a fracture surface of the sample to be close to a target area, cutting the sample to expose a Poly layer, carrying out wet method corrosion, removing Poly, preparing a first cutting surface, cutting the sample, preparing a second cutting surface in a substrate, and finally completing the planar TEM sample. The new method based on the prior art is provided by the invention for TEM analysis which is carried out for observing gate oxide defects and silicon substrate dislocation below polycrystalline Poly, the influences of Poly crystal lattices to TEM observation are removed by means of Poly corrosion, and the detects in the gate oxide can be accurately positioned by the corrosion of a corrosive agent to the substrate. By adopting the method, the quality and the success rate of failure analysis in the type are improved.

The invention discloses a dislocation type electric leakage analysis method in a grooved MOS device. The method comprises the steps of obtaining defect positions corresponding to light emitting points through an EMMI analysis method, controlling EMMI analysis conditions to enable the diameters of the light emitting points to be smaller than or equal to 1.5 microns, preparing TEM samples at the defect positions through an FIB method, and carrying out TEM analysis on the TEM samples, wherein the centers of the TEM samples and the centers of the defect positions coincide, and the thickness of the TEM samples is larger than or equal to the diameter of the light emitting points at the defect positions. The method can be used for quickly and accurately locating, analyzing and determining electric leakage failure caused by dislocation.

The invention relates to a preparation method for a transmission electron microscope (TEM) sample. The method comprises the following steps: providing a sample requiring detection, wherein the sample requiring detection has at least two areas requiring detection, and the two areas comprises a first detection area and a second detection area; forming a mark on the first detection area of the sample requiring detection; carrying out cutting for the first detection area to obtain a first sample sheet, and carrying out cutting for the second detection area to obtain a second sample sheet, wherein the first sample sheet comprises the mark, and the shape of second sample sheet is the same as the shape of the first sample sheet; attaching and bonding the surface of the first sample sheet and the surface of the second sample sheet to form a two-sample sheet, wherein the surface of the first sample sheet and the surface of the second sample sheet have the areas requiring detection; carrying out milling for the two-sample sheet along the two cut relative side surfaces of the two-sample sheet until the mark is exposed, such that the TEM analysis can be performed for any areas of the sample requiring detection.

The invention relates to a method for testing operating parameters in breakage of a copper wire of electric transmission and transformation equipment. The method includes steps of sampling from practical burnout equipment, selection of an intact wire of identical specification and preparation into a high-temperature simulation sample, Gleeble tensile experiment at different temperatures, metallographic analysis on fractures of a practical broken wire and a broken wire pulled by GLEEBLE, SEM analysis on the fractures of the practical broken wire and the broken wire pulled by GLEEBLE, TEM analysis on the fractures of the practical broken wire and the broken wire pulled by GLEEBLE, and the like. High cost of destructive tests of practical power transmission and transformation equipment underseries parameters is avoided, most approximate operating parameters in breakage instantaneity in operation can be obtained, and accordingly effective criterions can be provided for accident analysis.

The invention discloses a method for preparing a TEM sample of a nickel metal silicide, comprising steps: step 1, providing a chip, and the nickel metal silicide is formed in a selected area of ​​the device layer of the chip and the interface of a semiconductor substrate; step 2 1. Form a metal protective layer to completely cover the area of ​​the target position that needs to be analyzed by TEM; step 3, use ion beam to cut the TEM sample for TEM analysis; step 4, tilt the chip at a certain angle, and use ion beam to TEM The semiconductor substrate layer of the sample is subjected to ion bombardment and the semiconductor substrate layer is completely amorphized. The invention can improve the TEM contrast imaging difference between the semiconductor substrate layer and the nickel metal silicide of the TEM sample. The TEM sample that can directly perform clear imaging of the nickel metal silicide in the TEM mode can be obtained, thereby shortening the TEM observation time of the sample and reducing the observation cost.

The invention provides a TEM sample carrying network supporting film, a preparation method thereof, and a TEM sample analysis method. Wherein, the TEM sample carrier grid support film at least includes: a carrying component, a hollowed out area is provided in the carrying component, and a plurality of hollowed out parts are included in the hollowed out area; a carbon film is covered on the hollowed out area; wherein, A sample hole is arranged in the carbon film covered on at least one of the hollow parts. The sample holes provided on the carbon film of the TEM sample grid support film are suitable for avoiding the TEM sample from being affected by the carbon film when performing TEM analysis, and can be firmly adsorbed on the carbon film at the same time, and obtain sufficient carbon film. support.