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Transmission electron microscopy analysis method using focused ion beam and transmission electron microscopy sample structure

A technology of focusing ion beams and analysis methods, applied in the field of TEM sample structure, can solve the problems that TEM analysis cannot obtain analysis results, cannot obtain analysis, etc.

Inactive Publication Date: 2009-07-01
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, when defects are concentrated at a specific point, effective analysis results cannot be obtained by conventional TEM analysis, in which a TEM electron beam passes through a wide and thin sample
That is, although analysis over a wider area can be obtained by using a thinner sample prepared by FIB milling, analysis over a specific point cannot be obtained due to refraction and diffraction of the electron beam over the area including the specific point

Method used

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  • Transmission electron microscopy analysis method using focused ion beam and transmission electron microscopy sample structure
  • Transmission electron microscopy analysis method using focused ion beam and transmission electron microscopy sample structure

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Embodiment Construction

[0027] In the following detailed description of the embodiments, specific embodiments of the invention are shown by way of illustration in conjunction with the accompanying drawings. In the drawings, like numerals generally describe like parts throughout the several views. These specific embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized, and structural, logical, and electrical changes may be made without departing from the scope of the present invention. Furthermore, it is to be understood that the various embodiments of the invention, although different, are not necessarily independent of each other. For example, a particular feature, structure, or characteristic described in one embodiment may also be included in other embodiments. Accordingly, the following detailed description should not be read in a limiting sense, but the scope of the invention is to be determined only by the a...

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Abstract

A TEM (transmission electron microscopy) analysis method using FIB (focused ion beam) includes dividing a TEM sample into a plurality of analysis regions; determining an FIB beam current for each of the analysis regions; and performing FIB milling on each of the analysis regions by using the determined FIB beam current. Further, the method includes loading the TEM sample onto a TEM sample grid and transmitting a TEM electron beam on the TEM sample to perform the TEM analysis.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2007-0137122 (filed on December 26, 2007), the entire contents of which are hereby incorporated by reference. technical field [0002] Embodiments of the present invention relate to a TEM (transmission electron microscopy) analysis method using FIB (focused ion beam) and a TEM sample structure. Background technique [0003] TEM analysis is used on a TEM sample placed on a TEM sample grid. A TEM electron beam passes through an analysis region on a TEM sample to obtain a TEM image, so that various defects can be analyzed. [0004] Among the various techniques used to prepare TEM samples, FIB milling is a relatively new and effective technique. Since FIB can be applied to micro-machine samples with great precision, extremely thin films can be milled from specific regions of samples such as semiconductors or metals. Therefore, precise TEM analysis can be obtained by performing FIB milling on the anal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/18
CPCG01N23/04H01L21/02H01L22/00
Inventor 金东巧
Owner DONGBU HITEK CO LTD
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