The invention belongs to the technical field of an
integrated circuit, and particularly relates to a
CMOS integrated circuit terahertz detector applied to a terahertz
skin imaging field. A super renewable
receiver circuit is adopted by the
CMOS integrated circuit terahertz detector; and a circuit structure comprises a
low noise amplifier, a group of oscillators and a group of envelope
wave detection circuits. A terahertz wave is injected into the
low noise amplifier, and is coupled by employing a
capacitor alternating current manner; a
grid bias voltage is set to be adjustable, and the maximum
conversion gain can be obtained by adjusting biases of injection pair transistors; the envelope
wave detection outputs a
voltage signal positively correlated to the input
signal intensity, the injection realizes the sensitivity which is 300GHz to 400GHz and is close to -80
dBm, the
conversion gain is highest up to 57dB, and the overall
power consumption is not greater than 8mW. According to the
CMOS integrated circuit
terahertz detector related by the invention, the influences of change in a locking range, fluctuation in a
center frequency, low output swing and the like due to a technological error and a temperature drift are thoroughly overcome; and the CMOS integrated circuit terahertz
detector can be applied to a high-performance terahertz
detector.