The invention provides a complementary
metal oxide semiconductor (
CMOS) imaging sensor which at least comprises a
semiconductor substrate and a plurality of pixel units located in the
semiconductor substrate. Each pixel unit at least comprises a first
sensitization device, a second
sensitization device, a pixel reading circuit and an isolation structure. Compared with the existing
CMOS imaging sensor, the second
sensitization devices are added in the traditional
CMOS imaging sensor, so that an output response curve of the sensitization devices is nonlinearity, corresponding to the same output
voltage swing, maximum magnitudes of the CMOS imaging sensor to sense light are increased, namely a maximum value of lighting levels is increased, and accordingly a
dynamic range of the imaging sensor is improved. Simultaneously, a connection mode of the pixel reading circuits of the existing CMOS imaging sensor is kept to guarantee
image capture quality of the CMOS imaging sensor.