424 results about "Ion beam irradiation" patented technology

A beam extraction process (interruption and restart) is appropriately performed when a failure occurs during irradiation of a spot group. A charged particle irradiation system includes a synchrotron 12 and a scanning irradiation unit 15 that scans an ion beam extracted from the synchrotron over a subject. The extraction of the ion beam from the synchrotron is stopped on the basis of a beam extraction stop command. Scanning magnets 5A and 5B are controlled to change a point (spot) to be irradiated with the ion beam, while the extraction of the ion beam is stopped. The extraction of the ion beam from the synchrotron is restarted after the change of the spot to be irradiated. When a relatively minor failure in which continuous irradiation would be possible occurs during irradiation of a certain spot with the beam, the extraction of the beam is not immediately stopped.

An apparatus for evaluating a cross section of a specimen in a specimen chamber wherein the apparatus comprises a specimen stage for placing the specimen, temperature regulation means for regulating the temperature of the specimen, ion beam generation means for irradiating the specimen with an ion beam thereby performing cross section processing and observation of the specimen, detection means for detecting emission signals emitted from the specimen in response to the irradiation of the ion beam for observing the specimen and marking means for marking the specimen.

In a cluster ion beam irradiation apparatus including an apparatus for measuring size and energy distribution of gas cluster ions by using the time of flight (TOF) mass spectrometry, a unit for applying a retarding voltage is disposed in a stage preceding a TOF measuring instrument including a drift tube and a current measuring instrument. By measuring the size and energy distribution of the gas cluster ions and adjusting ionization conditions, cluster ions having predetermined energy and size are supplied to a work surface. In addition, a product of a pressure in an ion transportation device and an ion transportation length is controlled so as to satisfy the relation P×L≦30/N^2/3/E^1/2 Pa.m, where N is the size of gas cluster ions used for irradiation, and E is kinetic energy (eV) of the gas cluster ions.

Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light.

An ion beam processing device has a sample holder for fixing a sample on which a section has been formed by irradiation of a specified focused ion beam from a surface side, and gas ion beam irradiation device for irradiating a gas ion beam to a region of the sample fixing using the holder member that contains the section to remove a damage layer on the section. The gas ion beam from the gas ion beam irradiation device irradiates the section from a rear surface side of the sample at a specified incident angle.

There is disclosed a cross-sectional specimen preparation apparatus. The milling position can be modified or corrected in a short time. Also, the internal structure of the specimen can be known. The apparatus has an optical observation device for observing a cross section of the specimen milled by the ion beam. During ion beam irradiation or when the irradiation is interrupted, a shutter is opened. The cross section of the specimen can be observed while maintaining the vacuum inside a processing chamber. The apparatus further includes an adjusting mechanism for varying the relative position between the specimen and the shielding material. Whenever one sectioning operation ends, an image of the cross section is accepted and the milling position is moved an incremental distance. A three-dimensional image of the specimen is constructed from obtained plural images.

A substrate processing apparatus includes a processing chamber and a vacuum spare chamber adjacent thereto through a vacuum valve. The processing chamber houses two holders for holding substrates on their surfaces on the same side. The processing chamber is provided with an ion source for irradiating the substrate on each holder having reached a processing position P with an ion beam so that it is subjected to ion implantation. The processing chamber is internally provided with a holder moving mechanism for performing the operation of moving the two holders in parallel independently from each other so that they traverse the processing position P, and moving the two holders in parallel simultaneously between the insides of the processing chamber and vacuum spare chamber through the vacuum valve. The vacuum spare chamber is internally provided with a substrate replacing mechanism for replacing processed substrates and non-processed substrates with each other collectively for the two holders in cooperation with the holder moving mechanism.

In-plane distribution of a target objectcontained in a sample is measured. The sample dispersedly placed on a substrate is treated to promote ionization of the target object, then the mass and flying amount of an ion containing the target object or a component of the target object is determined by irradiating an ion beam to the sample and performing time-of-flight secondary ion mass spectrometry of the ion that flies from a portion in the sample where the ion beam is irradiated, and the in-plane distribution of the target object is determined from the mass and flying amount data obtained at plural portions by scanning the beam on the sample plane. The step of treating the sample to promote ionization of the target object includes contacting an aqueous solution of an acid that does not crystallize at ordinary temperature with the sample. A high spatial resolution two-dimensional image can be obtained.

When a sample is cut to update an observed section, an electron beam is focused on the observed section. An apparatus of the invention includes an ion gun 102 which irradiates an ion beam onto a sample 200 to form an observed section 202, an electron gun 104 which irradiates an electron beam EB onto the observed section 202 formed by the ion gun 102, a focal point adjusting unit 106 which adjusts a relationship between the observed section 202 and a focal point of the electron beam EB, and a focal point control unit 108 which controls the focal point adjusting unit 106 on the basis of an amount of cut of the sample 200 obtained by irradiation of the ion beam IB obtained by the ion gun 102.

A microbolometer sensor has a first cantilever supported above a substrate and formed of a bimaterial so as to deform in a first direction in response to incident radiation, and a second cantilever supported above the substrate and formed of a bimaterial so oriented as to cause the second cantilever to deflect oppositely to the first cantilever in response to radiation. The first and second cantilevers have a spacing therebetween that varies as a function of radiation incident on said first and second cantilevers. Means for sensing the deflection of the first and second cantilevers to provide an indication of the incident radiation is provided. A process of forming a micromechanical cantilever structure is also providing by irradiating a cantilever with an ion beam, whereby the cantilever is flattened. Also, the cantilever can be annealed in a rapid thermal annealing process to flatten the cantilever.

A composite focused ion beam device includes a first ion beam irradiation system 10 including a liquid metal ion source for generating a first ion, and a second ion beam irradiation system 20 including a gas field ion source for generating a second ion, and a beam diameter of the second ion beam 20A emitted from the second ion beam irradiation system 20 is less than that of the first ion beam 10A emitted from the first ion beam irradiation system 10.

The present invention provides an ion beam processing technology for improving the precision in processing a section of a sample using an ion beam without making a processing time longer than a conventionally required processing time, and for shortening the time required for separating a micro test piece without breaking the sample or the time required for making preparations for the separation. An ion beam processing apparatus is structured so that an axis along which an ion beam is drawn out of an ion source and an ion beam irradiation axis along which the ion beam is irradiated to a sample mounted on a first sample stage will meet at an angle. Furthermore, the ion beam processing apparatus has a tilting ability to vary an angle of irradiation, at which the ion beam is irradiated to the sample, by rotating a second sample stage, on which a test piece extracted from the sample by performing ion beam processing is mounted, about the tilting axis of the second sample stage. The ion beam processing apparatus is structured so that a segment drawn by projecting the axis, along which the ion beam is drawn out of the ion source, on a plane perpendicular to the ion beam irradiation axis can be at least substantially parallel to a segment drawn by projecting the tilting axis of the second sample stage on the plane perpendicular to the ion beam irradiation axis.

An ion beam sputtering film deposition apparatus is provided which can form a high-quality thin film that is dense, smooth and faultless. The film deposition apparatus has ion beam irradiating unit, a target 105 containing a film forming substance to be sputtered, and holding unit 112 to hold a substrate 106 on which the sputtered film forming substance is deposited. The ion beam irradiating unit irradiates gas cluster ions to both the target 105 and the substrate 106.

An apparatus for processing and observing a sample has a sample stage for supporting a sample at a preselected location thereof, a focused ion beam irradiation system for irradiating the sample with a focused ion beam along an optical axis to cut out a portion from the sample, and a side entry stage disposed over the sample stage and extending slantingly with respect to the optical axis of the focused ion beam irradiated by the focused ion beam irradiation system. The side entry stage has a microscope sample holder for picking up the cut-out sample portion directly from the preselected location of the sample and for supporting the sample portion. The microscope sample holder is configured to be removed from the side entry stage while supporting the sample portion and to be connected to an entry stage of a microscope device for observing the sample portion.

The frequency of replacement of an insulating spacer disposed between grids of an ion beam irradiation apparatus is to be reduced. In addition, the intervals of the multiple grids in the ion beam irradiation apparatus are to be kept constant. To achieve these objects, in a so-called insulating spacer provided for maintaining insulation between the grids, a groove portion having a bottom onto which sputtered materials are hard to adhere is provided on the central portion of the side surface of the insulating spacer all along its circumference.