The invention relates to a method for non-epitaxially growing a semiconductor, which belongs to the field of preparation of nanometer materials. The method is a low-temperature liquid phase method, and comprises the following steps of: dropwise adding silver sol onto a substrate, and vaporizing a solvent in the silver sol to obtain a silver film; keeping a substrate silver film surface upward, adding ethanol and a 1-sulfo-decane acetone solution, standing, adding a chalcogen precursor solution, mixing, reacting at the temperature of 30-80 DEG C for 4-12 hours, washing with absolute ethanol, and naturally airing to obtain an amorphous film; and keeping an amorphous film surface upward, adding toluene, oleic acid and oleylamine, standing, adding a methanol solution of a cadmium salt and a phosphine ligand, reacting at the temperature of 50-80 DEG C for 2-6 hours, washing with absolute ethanol, and naturally airing to obtain a semiconductor which grows non-epitaxially. The method is low in cost, and is easy for large-scale production; and the method is not easily limited by lattice mismatch, a deposit critical thickness and a substrate, a single crystal semiconductor with a one-dimensional micro / nano structure or a two-dimensional film structure can be grown in situ on different substrates under large lattice mismatch, and the method has a wide application field.