The invention discloses a quantum well epitaxy structure of a semiconductor laser, in particular to a quantum well epitaxy structure of a high-efficiency semiconductor laser in a 940 nm-1000 nm wave band. The quantum well epitaxy structure comprises a substrate, a buffer layer, a lower limiting layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, an upper limiting layer and an electrode contact layer, wherein the buffer layer, the lower limiting layer, the lower waveguide layer, the quantum well layer, the upper waveguide layer, the upper limiting layer and the electrode contact layer are sequentially deposited on the substrate; the upper waveguide layer and the lower waveguide layer are AlxGaAs, and x is equal to 0.13-0.2; and the upper limiting layer and the lower limiting layer are AlyGaAs, and y is equal to 0.3-0.39. The quantum well epitaxy structure solves the problems of high working voltage and low photoelectric conversion efficiency of the semiconductor laser by optimizing the Al content of the waveguide layers and the limiting layers of the quantum well epitaxy structure, and achieves the purposes of reducing the working voltage and enhancing the photoelectric conversion efficiency.