The embodiment of the invention provides a
CMOS image sensor and relates to the technical field of semiconductors. The
CMOS image sensor can achieve high-sensitivity and high-speed responses. Each pixel unit of the
CMOS image sensor comprises a P type
semiconductor substrate, a first N type
ion layer on the upper portion of the P type
semiconductor substrate, a P trap surrounding the first N type
ion layer, a second N type
ion layer, a third N type ion layer, a first P type ion layer and a second P type ion layer, wherein the second N type ion layer, the third N type ion layer, the first P type ion layer and the second P type ion layer are arranged on the upper portion of the first N type ion layer; the first P type ion layer and the second P type ion layer are spaced by the second N type ion layer, the second N type ion layer and the third N type ion layer are spaced by the second P type ion layer, the
doping concentration of the second N type ion layer and the
doping concentration of the third N type ion layer are larger than the
doping concentration of the first N type ion layer, and the doping concentration of the first P type ion layer and the doping concentration of the second P type ion layer are between the doping concentration of the P trap and the doping concentration of the P type
semiconductor substrate. The CMOS image sensor is used for sensor manufacturing.