The invention discloses
ion beam deposition equipment for an
infrared metal film and a film deposition method. The equipment comprises a
wafer loading and unloading cavity and a
sputtering cavity, wherein a first high-vacuum
isolation valve is arranged between the
wafer loading and unloading cavity and the
sputtering cavity, the
wafer loading and unloading cavity is provided with a vacuum sealingdoor, a pushing rod penetrates through the vacuum sealing door, a workpiece table is arranged at the end, on the inner side of the vacuum sealing door, of the pushing rod, a pushing mechanism used forpushing the pushing rod is arranged on the outer side of the vacuum sealing door, and the wafer loading and unloading cavity is connected with a first vacuumizing device. The film deposition method adopts the equipment to perform film deposition. According to the invention, the wafer loading and unloading cavity is arranged, so that the cavity opening and vacuumizing times of the
sputtering cavity can be reduced, the vacuumizing time can be shortened, the productivity can be improved, the vacuum environment can be always kept in the sputtering cavity, the target burning times can be reduced,and the
utilization rate of a target material can be improved. The
ion beam deposition equipment has the advantages of
high productivity, high target material
utilization rate and the like, can be widely used for depositing
infrared metal films, and has very high use values and application prospects.