The invention discloses a brushing method for a
reaction chamber upper cover of a
metal organic matter chemical vapor deposition system. The brushing method comprises the steps that after growing of an epitaxial slice in a
reaction chamber of the
metal organic matter chemical vapor deposition system is completed, the temperature of circulating water entering the
reaction chamber upper cover is reduced, the reaction chamber upper cover is made to be at the constant temperature of 20-30 DEG C, and then attachments on the reaction chamber upper cover are brushed linearly in one direction through a
bristle brush. Due to the fact that the surface temperature of the reaction chamber upper cover is reduced, the temperature of the attachments attached to the reaction chamber upper cover is reduced, and the situation that the attachments tend to be in a
liquid state is changed to the situation that the attachments tend to be in a
solid state, so that the attachments are easy to
brush away, cannot adhere to the
bristle brush and also cannot block a
small hole of the reaction chamber upper cover. According to the brushing method for the reaction chamber upper cover of the
metal organic matter chemical vapor deposition system, by reducing the temperature of the reaction chamber upper cover, the temperature of the attachments on the reaction chamber upper cover is reduced, so that the attachments tend to be in the
solid state and are easy to brush away; therefore, the attachments are prevented from being in the
liquid state, being liable to be adhered to the
bristle brush and blocking the
small hole of the reaction chamber upper cover, meanwhile, the reaction chamber upper cover is relatively brushed cleanly, and the brushing efficiency is improved.