31results about How to "Large emission cross section" patented technology

The invention provides a tunable laser crystal chrome-mixing magnesium molybdate and a preparation method thereof. A fused salt top-seeded method is adopted, 55-80at.%K2Mo2O7 serves as a fluxing agent, growth parameters include that cooling speed is 0.5-5 DEG C / day, growth temperature is 700-880 DEG C, rotation speed is 5-30 turns / minute, and high quality big-sized Cr 3+: MgMoO4 crystal is grown. The crystal belongs to a monoclinic system and has a C2 / m space group structure, and a=10.273, b=9.288, c=7.025, beta=106.96 degrees, z=8, V=641.14, and Dc=3.82 g / cm3. The crystal has the advantages of being moderate in mechanical performance, wide in tunable laser wave band, big in emission section, short in fluorescence service life and the like and is a good tunable laser crystal material.

The invention relates to a barium tungstate crystal all-solid-state continuous Raman laser. A barium tungstate crystal is used as a Raman medium to be placed into a laser resonant cavity and performs intracavity Raman conversion on,fundamental light produced by a laser gain medium so as to obtain Raman laser output with 1180 nm continuous running. The laser gain medium is an Nd: YVO4 crystal or other laser crystals mixed with Nd<3+>, Yb<3+> and Pr<3+>. The invention has simple and compact structure, overcomes the adverse effects of high Raman threshold values and serious thermal effect in a continuous running mode, obtains high beam quality, achieves the continuous Raman laser output of low threshold values and high power, efficiency and stability, has high application value in the fields of medical treatment, weather, maritime affairs, military affairs, aviation, scientific research, and the like, and obtains the continuous Raman laser output with different wavelengths by selecting different laser gain media for performing frequency transformation on different fundamental waves.

The Raman laser with simple compact structure includes pump system of diode laser end face, laser cavity composed of coated laser input / output cavity mirrors, independent laser gain crystal placed in laser cavity, Raman frequency shift crystal and turning Q unit for laser. Output Raman laser is obtained from laser in quasi continuous operation. Laser gain crystal is Nd:YVO4 crystal, doping Nd3+ laser crystal or doping Yb3+:YAG etc. laser crystals, which generate laser oscillations with wavelengths near to 1.34 micro or 1.06 micro. Raman frequency shift crystal is prepared from one piece of single crystal as Raman active medium. Here, the Raman frequency shift crystal is undoped YVO4 crystal etc. in the invention, laser gain crystal and Raman frequency shift crystal are independent from each other so as to raise output power and beam quality of laser since heat effect does not occur.

The Raman laser with simple compact structure includes pump system of diode laser end face, laser cavity composed of coated laser input / output cavity mirrors, independent laser gain crystal placed in laser cavity, Raman frequency shift crystal and turning Q unit for laser. Output Raman laser is obtained from laser in quasi continuous operation. Laser gain crystal is Nd:YVO4 crystal, doping Nd3+ laser crystal or doping Yb3+:YAG etc. laser crystals, which generate laser oscillations with wavelengths near to 1.34 micro or 1.06 micro. Raman frequency shift crystal is prepared from one piece of single crystal as Raman active medium. Here, the Raman frequency shift crystal is undoped YVO4 crystal etc. in the invention, laser gain crystal and Raman frequency shift crystal are independent from each other so as to raise output power and beam quality of laser since heat effect does not occur.

The invention relates to a thulium doped lead fluoride crystal. The molecular formula of the crystal is TmxPbF2+3x, wherein x is the dosage concentration of Tm3+ and is 0.1-10mol percent. A melt method is used for the growth of the crystal and comprises the following steps of: (1) selecting the value of x, and weighing raw materials by a stoichiometric ratio according to the molecular formula TmxPbF2+3x, wherein initial raw materials for the crystal growth comprise TmF3 and PbF2, and x is 0.1-10mol percent; (2) sufficiently and uniformly mixing the raw materials weighed by the ratio, drying in vacuum and pressing into blocks; and putting the blocks into a graphite crucible or a platinum crucible by using a PbF2 crystal as a seed crystal with a growth atmosphere of argon or CF4 gas. The crystal has the advantages of long fluorescence lifetime of 10ms and larger absorption and emission cross section and is expected to be applied to lasers within a wave band of 2mum of all-solid laser diode pumping.

The invention discloses a chromium-doped lithium tungstate magnesium crystal as well as a preparation method and an application thereof. The molecular formula of the crystal is Cr3+:Li2Mg2(WO4)3, the crystal belongs to an orthorhombic crystal system and a Pnma space group, and the cell parameter is as follows: Z=4. The crystal grows in a top seeded solvent growth method, the mixture of 75% Li2WO4 and 25% WO3 is used as a fluxing agent, the concentration ratio of the fluxing agent in the growth raw material is 55 to 80 percent, and the growth parameters are as follows: the cooling rate is 0.5 to 5 DEG C / day, the growth temperature is 800 to 880 DEG C, and the rotation speed is 5 to 30 turns / min. The crystal has the characteristics such as moderate mechanical performance, large transmission cross section and the like, the tunable range is 750nm to 1050nm, and the crystal is expected to become a novel tunable laser crystal and can be actually used.

The invention is an lanthanum oxygen-calcium neodymium borate-doping laser crystal and its making method as well as its application, relating to the artificial crystal field. It belongs to a monoclinic system, space group is Cm, cell parameters are an equal to 8.1732 angstrom, b equal to 16.0860 angstrom, c equal to 3.6268 angstrom, beta equal to 101.40 deg., Z equal to 2, V equal to 467.4229 cu angstrom, and refractive index equal to 1.72. It adopts pull method (Czochralski method) to grow a high-quality, large-size lanthanum oxygen- calcium neodymium borate (Nd3plus : LaCa4O(BO3)3)-doping crystal at a crystal speed of 5-30 r / m and at a pull rate of 0.5-2mm / hr under 1410 deg.C. It is a new type laser crystal and has a nonlinear optical performance at the same time.

The invention discloses a transparent vanadate glass and method for making same, wherein the glass is based on the conventional vanadate glass V2O5-SiO2, adding alkali metal oxide N2O+K2O+Cs2O and alkali metal hydrate CaO+BaO+SrO. The glass is prepared in environment where oxygen purity is above 99%.

The invention relates to a transparent oxyfluoride tellurite glass, which comprises the following components by mole ratio: 55-75mol% of TeO2, 5-25mol% of Al2O3, 0-18mol% of CaF2, 0-15mol% of LaF3. The oxyfluoride tellurite glass uses a traditional glass melting process for melting and molding. The oxyfluoride tellurite glass possesses excellent thermal stability, and is an ideal rare earth doped up-conversion luminescence matrix material which is capable of enhancing the permeability of the matrix, improving the treatment load of a land infiltration system and improving the denitrification efficiency, the oxyfluoride tellurite glass does not contain toxic heavy metals Pb and Cd elements which are harmful to human body and environment.

The invention relates to a transition-metal-doped zinc sulfide or zinc selenide planar waveguide material and a preparation method. The transition-metal-doped zinc sulfide or zinc selenide planar waveguide material is characterized in that a YAG (yttrium aluminum garnet) or Al2O3 lath is respectively combined to two sides of transition-metal-ion-doped zinc sulfide or zinc selenide ceramic to form a sandwich planar waveguide structure, so that a heat-mirror effect of laser can be effectively controlled, and the intermediate infrared waveguide laser output is realized. By adopting the transition-metal-doped zinc sulfide or zinc selenide planar waveguide material, not only can the heat management be effectively realized by virtue of the sandwich composite structure, but also the mass production can be realized, and important significance on the development of a high-power laser technology and integrated optics can be realized.

The invention discloses a dysprosium-doped strontium calcium molybdate green laser crystal. The molecular formula for the crystal is Dy<3+>:Sr2CaMoO6, which belongs to an orthorhombic system and a Pmm2 space group, crystal cell parameters are alpha=beta=gamma=90 DEG, a=8.1513 angstrom, b=5.7416 angstrom, c=5.8385 angstrom and Z=2. The invention also provides a method of preparing the above dysprosium-doped strontium calcium molybdate green laser crystal. A molten salt top-seeded solution growth method is adopted; K2Mo2O7-MoO3 serves as a fluxing agent; the growth parameters are: a cooling rate of 0.5 to 3 DEG C per day, growth temperature of 750 to 790 DEG C, and a rotation speed of 5 to 30 revolutions per minute; the Dy<3+>:Sr2CaMoO6 crystal grows; and the doping concentration of Dy<3+> is 1at.% to 15at.%. The crystal of the invention can be used as a laser working material in a solid-state laser, a flash or a laser diode is used as a pumping source, and green laser is excited and generated and outputted.

Disclosed is a neodymium-doped lanthanum strontium aluminate tantalate laser crystal and process for preparation, wherein the crystal has a structural formula of (NdxLa(0.3-x)Sr0.7)(Al0.65Ta0.35)O3, wherein the value range of x is between 0.1-10 at%, the preparation method of the crystal comprises the following steps: (1) weighing raw materials of La2O3, SrCO3, Al2O3, Ta205 and Nd203 according to the molecular formula and chemical measurement, (2) mixing the raw material homogeneously, tabletting and placing aluminium oxide crucible into a Muffle furnace, sintering more than ten hours at 1200 deg C, (3) loading the sintered Nd:(La,Sr)(Al,Ta)O3 into a iraurite crucible, using (La,Sr)(Al,Ta)O3 single crystal as seed crystal, growing with intermediate frequency induction Czochralski method in inert gas atmosphere.

The invention relates to a lead fluoride crystal co-doped with ytterbium and alkaline and a preparation method thereof. The structural formula of the crystal is Ybx: My: PbF2, and the growth method of the crystal includes the following steps: (1) the values of x and y are determined; (2) the raw material is weighed in proportion, is fully and evenly mixed and is pressed into blocks, the blocks are put into an iraurite, platinum or plumbago crucible, PbF2 crystal is adopted as a seed crystal, growth atmosphere is high purity argon or CF4 gas, and melt growth method is adopted. Experiments show that the crystal of the invention has large absorption and emission section, long fluorescence life time and high thermal conduction.

The invention discloses a chrome iron ion double-doped complex selenium zinc sulfide laser material and a preparation method thereof. The molecular formula of the chrome iron ion double-doped complex selenium zinc sulfide laser material is Cr, Fe:ZnSxSe1-x, wherein x is not less than 0 and not more than 1. For the Cr and Fe transition metal ion energy band, the bandwidth is in a middle infrared wavelength range, the absorption and emission bandwidths are wide, the absorption and emission section areas are large, and ultrashort and ultrafast laser output with high peak power can be obtained. The Cr, Fe: ZnSSe laser material with excellent laser optical property can be subjected to LD (Laser Diode) direct pumping to manufacture an ultrafast laser device with low threshold, thus, the laser device is promoted to be more succinct and more miniature.