81results about How to "Increase vertical distance" patented technology

In various embodiments, self-adjusting reclinable seating is disclosed. When the user applies a force to the seating by shifting his or her center of gravity, the backrest and seat portions of the seating move in response to the force to recline the seating. The user can return the seating to an upright position by again shifting his or her center of gravity. Such a configuration eliminates the need for manual recline controls. The seating is further configured to continuously vary the angle of the seat and backrest portions relative to the ground as the user moves. In particular, vertical distance between the front of the seat and the ground increases as the backrest reclines. Continuously varying the angle of both the seat and the backrest portions of the seating relative to the ground may improve a user's seating comfort, for example, by decreasing or eliminating the user's need to shift position on the seat when reclined.

A light-emitting diode (LED) packaging structure having low angular correlated color temperature deviation includes: a substrate, a LED chip, a phosphor body, and a transparent lens. The LED chip is disposed on the substrate, and the phosphor body includes a hemisphere body and an extension part extended from the bottom of the hemisphere body. The phosphor body is disposed on the substrate and covers the LED chip. Besides, the transparent lens is disposed outside the phosphor body to cover the phosphor body to increase light extraction efficiency. With the implementation of the present invention, the setup of the extension part makes a longer vertical distance between the LED chip and the top of the phosphor body, so that the light in the normal direction of the LED chip can have a longer optical length, thereby to reduce the angular correlated color temperature deviation.

A semiconductor device, comprising a substrate layer made of a semiconductor material of a first conductivity type and having a first insulation region, and a vertical bipolar transistor having a first vertical portion of a collector made of monocrystalline semiconductor material of a second conductivity type and disposed in an opening of the first insulation region, a second insulation region lying partly on the first vertical portion of the collector and partly on the first insulation region and having an opening in the region of the collector, in which opening a second vertical portion of the collector made of monocrystalline material is disposed, said portion including an inner region of the second conductivity type, a base made of monocrystalline semiconductor material of the first conductivity type, a base connection region surrounding the base in the lateral direction, a T-shaped emitter made of semiconductor material of the second conductivity type and overlapping the base connection region, wherein the base connection region, aside from a seeding layer adjacent the substrate or a metallization layer adjacent a base contact, consists of a semiconductor material which differs in its chemical composition from the semiconductor material of the collector, the base and the emitter and in which the majority charge carriers of the first conductivity type have greater mobility compared thereto.