The invention belongs to the technical field of quantum dot light-emitting diodes, and particularly relates to a solution processing series quantum dot light-emitting diode based on a doped connectionlayer and a manufacturing method of the solution processing series quantum dot light-emitting diode. The light emitting diode comprises a bottom device and a top end device; the bottom device comprises a cathode, a first electron injection layer, a first quantum dot light-emitting layer, a first hole transport layer and a first hole injection layer which are sequentially stacked from bottom to top. The top end device comprises a second electron injection layer, a second quantum dot light-emitting layer, a second hole transport layer, a second hole injection layer and an anode which are sequentially stacked from bottom to top, the first hole injection layer of the bottom device and the second electron injection layer of the top end device are stacked, the first hole injection layer is madeof a PEDOT: PSS-GO solution. and the second electron injection layer is made of a solution containing ZnMgO. The invention provides an effective method for improving the performance of a solution processing quantum dot light emitting diode.