The invention provides a manufacturing method of a
semiconductor device. The manufacturing method comprises the steps of: providing a
semiconductor substrate; performing first
ion implantation by using a first
photomask, so as to form a first well region of a first
conductivity type in the
semiconductor substrate; performing second
ion implantation by using a second
photomask, so as to form a second well region of the first
conductivity type in the semiconductor substrate; forming a first
diffusion region of a second conductive type in the first well region; and forming a second
diffusion region of the first
conductivity type in the second well region, wherein the second well region positions on the outer side of the first well region, and a concentration of ions of the first conductivity type in the first well region is lower than that that of ions of the first conductivity type in the second well region. The invention further provides a
semiconductor device manufactured by adopting the
semiconductor device, and an electronic device. Compared with the prior art, the semiconductor
diode device manufactured by adopting the manufacturing method and the electronic device comprising the same can improve the ESD
voltage tolerance and current tolerance, and effectively reduce electric leakage and improve the ESD performance of the devices.