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III-nitride semiconductor light emitting device

A technology of nitride semiconductors and light-emitting devices, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as difficult manufacturing, and achieve the effect of promoting current expansion and improving ESD characteristics

Inactive Publication Date: 2009-04-08
EPIVALLEY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is very difficult to fabricate the 18 / cm 3 A light-emitting device of an n-type nitride semiconductor layer grown to a thickness of several μm at a doping concentration of

Method used

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Embodiment Construction

[0051] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

[0052] Image 6 is a view describing an experimental example of the present invention, specifically, a surface micrograph (left side) showing a state in which 5×10 19 / cm 3 The doping concentration (supply 9.5sccm of DTBSi as Si source) and 60 thickness of the n-type GaN layer and having a 100 The thickness of the un-GaN layer (by adjusting the supply time of the Si source, for example, supplying the Si source for 15 seconds and stopping the supply for 25 seconds) to grow an n-type nitride semiconductor layer having a thickness of about 2 μm, and a surface showing the following state Microscopic photographs (right side): in which an n-type nitride semiconductor layer was grown under different conditions by supplying 9.0 sccm of DTBSi as a Si source. This experiment is used to study whether it can pass from such as 5×10 19 / cm 3 The high-concentration dop...

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Abstract

The present invention relates to a III-nitride semiconductor light emitting device, and more particularly, to a III-nitride semiconductor light emitting device which can facilitate current spreading and improve electrostatic discharge characteristic by providing an undoped GaN layer with a thickness over 100 A in an n-side contact layer.

Description

technical field [0001] The present invention relates to a III-nitride semiconductor light-emitting device, and more particularly, the present invention relates to an n-side contact layer by providing a thickness exceeding 100 The non-doped GaN layer promotes current spreading and improves electrostatic discharge characteristics of III-nitride semiconductor light-emitting devices. [0002] The III-nitride semiconductor light-emitting device refers to, for example, an Al (x) Ga (y) In (1-x-y) Light-emitting devices such as light-emitting diodes with compound semiconductor layers composed of N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), the group III nitride semiconductor light-emitting device may further include other groups of Elementally composed materials (such as SiC, SiN, SiCN, and CN) and semiconductor layers made of these materials. Background technique [0003] figure 1 is a view describing an example of a conventional group III nitride semiconductor light emitting device. The Gro...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/20H01L33/32
CPCH01L33/04
Inventor 朴恩铉全水根林在球
Owner EPIVALLEY
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