Antistatic protection circuit of radio frequency chip high-power amplifier

Abstract

The invention provides an antistatic protection circuit of a radio frequency chip high-power amplifier. The antistatic protection circuit comprises a PA core circuit, a PA output matching circuit, an ESD protection circuit and a power switch circuit; the power switch circuit is connected with the PA output matching circuit; the ESD protection circuit comprises a diode D1, a diode D2, a MOS tube N3 and a MOS tube N4; the anode of the diode D1 is grounded, and the cathode of the diode D1 is connected with the drain of the MOS tube N3 through the diode D2; the source of the MOS tube N3 is connected with the drain of the MOS tube N4, the source of the MOS tube N4 is grounded; the grid of the MOS tube N3 is connected with a power supply VDD, the cathode of the diode D2 is connected with the power supply VDD by orderly passing through the diodes D3 to D9 in a forward direction; the grid of the MOS tube N4 is connected with the power switch circuit; the cathode of the diode D1 is connected with the PA core circuit, and the cathode of the diode D1 is connected with the PA output matching circuit through the PAD1. The antistatic protection circuit of the radio frequency chip high-power amplifier provided by the invention has the advantages of being scientific in design, strong in practicability, simple in structure, high in EDS performance and low in cost.

Description

technical field [0001] The invention relates to a circuit, in particular to an antistatic protection circuit of a radio frequency chip high-power amplifier. Background technique [0002] The ESD bottleneck of current radio frequency integrated circuits is limited to several radio frequency pins (for example: low noise amplifier (LNA) input pin of radio frequency, power amplifier (PA) output pin of radio frequency). It is difficult for the ESD of these pins to exceed 4KV, generally about 2KV, and these two pins are more likely to be damaged by electrostatic attacks because they are connected to the antenna. [0003] The ESD protection circuit of the power amplifier (PA) of the existing radio frequency chip generally protects the power amplifier (PA) from being damaged by static electricity by stacking a plurality of diodes according to the required output power. When this method needs to output high power, many diodes need to be superimposed. For example, the transmission po...

AI Technical Summary

Problems solved by technology

When this method needs to output high power, many diodes need to be superimposed. For example, the transmission power of 20dbm requires about 8 diodes to be superimposed, and it is difficult to make the ESD performance reach 4KV.

Now if high ESD performance is required, many methods are to add ESD protection circuit on the printed circuit board (PCB) outside the chip, which increases the cost and loses the efficiency of PA, that is, the same power requires more current

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