44results about How to "High electroluminescent efficiency" patented technology

The invention relates to a membrane electroluminescent device, which comprises an indium tin oxide (ITO) conducting glass layer, a first insulating layer, a luminescent layer, a second insulating layer and a metal electrode layer which are arranged sequentially, wherein a metal layer with an aperiodic micro-nano structure is arranged between the luminescent layer and the second insulating layer; surface plasma effect can be generated on an interface between the metal layer with the aperiodic micro-nano structure and the luminescent layer; and by the plasma effect, the luminescent effect of the luminescent layer can be enhanced to increase luminescent intensity and improve the electroluminescent efficiency of the device. The invention also provides a preparation method for the membrane electroluminescent device correspondingly.

The invention belongs to a red organic electroluminescence device and a preparing method thereof. A vacuum evaporation technology is adopted to prepare indium tin oxide / 4, 4'-twin [N-(p-methylphenyl)-N-phenyl-amino] diphenyl or N, N'-double(1- naphthyl)-N, N'-biphenyl-1, 1'-biphenyl-4 and 4'-diamine / 8-hydroxyquinoline aluminum, classical trivalence europium composition Eu (TTA)3phen taking trifluoroacetylacetone thiofuran and BPT as a first ligand and a second ligand, and a main material 4, 4'-N, N'-twin carbazole biphenyl / 2, 9- dimethyl-4, 7- dimethyl-1, 10- phenanthroline / 8- hydroxyquinoline aluminum / lithium fluoride / aluminum. The ultimate electroluminescence current efficiency of the device is 6.1cd / A, the ultimatepower efficiency is 3.5lm / W, and the ultimate brightness is 2451.69cd / m<2>.

The invention is applicable for the technical field of photoelectric materials, and provides an organic semiconductor material and a preparation method thereof. The organic semiconductor material has the following chemical structural formula. According to the organic semiconductor material of the present invention, truxene is adopted as a core, and anthracene and a diazosulfide unit are concurrently introduced, such that stable increases of luminous efficiency and luminous stability are achieved, and a film forming performance is enhanced. In addition, the organic semiconductor material preparation method of the present invention has characteristics of simple operation and low cost, and is suitable for industrial production.

The invention relates to a highly effective two-tone white light high molecular material and it's preparing method in the field of lighting material technology. The chemical structure of the highly effective two-tone white light high molecular material is as the right type, wherein x=0.00001-0.5. The preparing method is that it uses polymer fluorenes as blue light structure unit, 4, 7-2 (4-(N-phenyl -N-(4-methyl phenyl) amino) phenyl)-2, 1, 3 -benzodithiazole as orange light structure unit, it uses combined polymerization mode to lead the orange light work unit into the blue light macromole fundamental chain by chemical key mode to prepare for the highly effective two-tone white light high molecular material.

The invention belongs to the technical field of photoelectric materials and provides an organic semiconductor material, a preparation method and application thereof. The organic semiconductor material has the structural formula as follow. In the organic semiconductor material, trimerization indene is the core and anthracene and benzothiadiazole units are introduced simultaneously. The organic semiconductor material realizes stable light emitting, has excellent resolvability, charge carrier transfer performance and charge balance, and can realize remarkable improvement of electroluminescent efficiency of organic semiconductor material. And the preparation method for the organic semiconductor material is simple to operate, low in cost and applicable to industrialized application.

An electroluminescent phosphor material has a formula: LnMBMLn, where L is the dual-tooth ligand with different structures, M is the 2-valence or 3-valence metal ion, n=1 or 2 and B is the bridge ligand. It includes red, green and blue materials. Its advantages are high thermal stability, good filming nature and high compatibility to polymer, and high electroluminescent effect.

The invention provides an organic small molecule electron transport material based on a naphthalene diimide unit and an application thereof, belonging to the field of organic photoelectric materials. The invention solves the problems of less selection of electron transport materials and poor device stability in the quantum dot light-emitting diode device in the prior art. The chemical structure of the organic small molecule electron transport material of the present invention contains naphthalene diimide units, and its advantages are: 1) The energy level of the lowest unoccupied molecular orbital is low, which is beneficial to the injection and transmission of electrons in QLED devices, and the highest occupied molecular orbital The energy level is low, which can block the injection of holes in the QLED device. The above two aspects are conducive to improving the electroluminescence efficiency of the QLED device; There is no absorption; 3) It has a rigid configuration, which can inhibit the crystallization of the material, which is beneficial to the processing in QLEDs and improves the stability of QLED devices.

The invention discloses a ruthenium complex with aggregation state induced phosphorescence enhancement characteristics, its preparation method and application. The ruthenium complex has a structure shown in formula I: wherein, N^N bidentate ligand is the first ligand, X^X bidentate ligand is the second ligand, and the first ligand includes 2, 2-bipyridine or 1,10-phenanthroline, the second ligand includes 2,2-distyrylbenzene derivatives. The ruthenium complex can emit strong phosphorescence in an aggregated state, and when used to prepare electroluminescent devices, it is not necessary to dope it as a guest into the host material, thereby simplifying the device preparation process and reducing device manufacturing costs. The electroluminescence efficiency of the device is improved, which is beneficial to industrialization. At the same time, the method for preparing the ruthenium complex provided by the invention is simple, the conditions are easy to control, and it is convenient for large-scale implementation.