The invention discloses a self supporting three dimension device and a preparation method thereof. The preparation method of the self supporting three dimension device includes: S1, providing a self supporting insulation
dielectric film with a basically flat upper surface; S2, generating a conducting layer and at least one device unit with a preset pattern on the upper surface of the self supporting insulation
dielectric film so as to generate a composite layer structure; S3,
cutting the composite layer structure so as to obtain at least one suspension portion locally connected with the composite layer structure, wherein each suspension portion is provided with each corresponding device unit; S4, using an
ion beam to irradiate the at least one suspension portion so as to deform the conducting layer, and thereby driving each suspension portion to bend around a portion of each suspension portion, connected with the composite layer structure, towards the direction far away from the self supporting insulation
dielectric film; S5, removing at least a portion of the conducting layer so as to obtain the self supporting three dimension device. The preparation method of the self supporting three dimension device can prepare a three dimensional structure and micron and nanometer devices which are insulated from one another on the self supporting insulation dielectric film, and has the advantages of being good in
controllability, low in cost, and capable of preparing the self supporting three dimension device large in area.