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55 results about "Transverse field" patented technology

Method and system for improving a policy for a stochastic control problem

A method and system are disclosed for improving a policy for a stochastic control problem, the stochastic control problem being characterized by a set of actions, a set of states, a reward structure as a function of states and actions, and a plurality of decision epochs, the method comprising using a sampling device obtaining data representative of sample configurations of a Boltzmann machine, obtaining initialization data and an initial policy for the stochastic control problem; assigning data representative of an initial weight and a bias of respectively each coupler and each node and the transverse field strength of the Boltzmann machine to the sampling device; until a stopping criterion is met generating a present-epoch state-action pair, amending data representative of none or at least one coupler and at least one bias, performing a sampling corresponding to the present-epoch state-action pair to obtain first sampling empirical means, obtaining an approximation of a value of a Q-function at the present-epoch state-action, obtaining a future-epoch state-action pair, wherein the state is obtained through a stochastic state process, and further wherein the obtaining of the action comprises performing a stochastic optimization test on the plurality of all state-action pairs comprising the future-epoch state and any possible action to thereby provide the action at the future-epoch and update the policy for the future-epoch state; amending data representative of none or at least one coupler and at least one bias, performing a sampling corresponding to the future-epoch state-action pair, obtaining an approximation of a value of the Q-function at the future-epoch state-action, updating each weight and each bias and providing the policy when the stopping criterion is met.
Owner:1QB INFORMATION TECHNOLOGIES INC

Ion mobility spectrometer

An ion mobility spectrometer is described having an ion filter in the form of at least one ion channel having a plurality of electrodes. A time-varying electric potential applied to the conductive layers allows the filler to selectively admit ion species. The electric potential has a drive and a transverse component, and in preferred embodiments each of the electrodes is involved in generating a component of both the drive and transverse fields. The device may be used without a drift gas flow, Microfabrication techniques are described for producing microscale spectrometers, as are various uses of the spectrometer.
Owner:奥斯通有限公司

Semicircular inversed offset scanning for enlarged field of view 3D

A computed tomography acquisition method, an imaging system, a computer readable medium provides laterally displacing a radiation detector (204) from a position with centered detector geometry with a centered transverse field of view to a first offset position (212); emitting first radiation by the radiation source (202), detecting the first radiation by the radiation detector (204) and acquiring projection data indicative of the first radiation; rotating the support around the rotational axis (214) by 180°; emitting second radiation by the radiation source (202), detecting the second radiation by the radiation detector (204) and acquiring projection data indicative of the second radiation; displacing the radiation detector (204) from the first offset position to a second offset position (226), with opposite direction and double length of the first displacement (a); emitting third radiation by the radiation source (202), detecting the third radiation by the radiation detector (204) and acquiring projection data indicative of the third radiation; rotating the support around the rotational axis (214) by 180°; and emitting fourth radiation by the radiation source (202), detecting the fourth radiation by the radiation detector (204) and acquiring projection data indicative of the fourth radiation.
Owner:KONINKLIJKE PHILIPS ELECTRONICS NV

Tunneling enhancement type HEMT device

InactiveCN105118859ABig withstand voltage boostAvoid breakingSemiconductor devicesHeterojunctionContact formation
The invention relates to the semiconductor technical field and specifically relates to a tunneling enhancement type HEMT device. A reverse polarization layer grows on the upper surface of a barrier layer between a source electrode and a drain electrode. The reverse polarization layer, the barrier layer and a buffer layer between the source electrode and the drain electrode form a double heterojunction. Two-dimensional hole gas (2DHG) and two-dimensional electron gas (2DEG) are respectively generated on the interface of the double heterojunction. A polarization super junction is thus formed. In a blocking state, the polarization super junction assists in exhausting a drift region to optimize the transverse field distribution of the device and improve the voltage withstanding of the device. Furthermore, source electrode metal contacts the barrier layer to form a Schottky barrier. Meanwhile, the source electrode and the reverse polarization layer contact to form ohm contact. The Schottky barrier between the source metal and the barrier layer blocks electrons from the source electrode to a 2DEG vertical conductive channel. When a voltage is added to a grid electrode, the Schottky barrier between the source electrode and the barrier layer is modulated. An electronic tunneling current is formed. The aim of enhancement is thus achieved.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Multi-component seismic data migration imaging method and system

The invention discloses a multi-component seismic data migration imaging method and system. The migration imaging method comprises the following steps: acquiring observation multi-component seismic records; acquiring observation system parameters, longitudinal wave migration speed, transverse wave migration speed, a migration density model and migration parameters of a seismic work area; acquiringa multi-component centrum wave field and a multi-component detection point wave field which correspond to every cannon-shot; carrying out longitudinal and transverse field separation on the multi-component centrum wave fields and the multi-component detection point wave fields; acquiring a gradient profile by using a gradient calculating formula; constructing a declining direction profile corresponding to every cannon-shot; acquiring a multi-component demigration simulated wave field corresponding to every cannon-shot; acquiring multi-component seismic record increment; determining an optimized step length according to the multi-component seismic record increment and the declining direction profile; and determining a migration profile according to the optimized step length and the declining direction profile corresponding to every cannon-shot. By the method or system, a migration profile which can directly reflect PP, PS, SP and SS reflecting coefficient information of an undergroundmedium can be obtained.
Owner:CHINA UNIV OF PETROLEUM (EAST CHINA)

Method for estimating the thermodynamic properties of a quantum ising model with transverse field

A method for estimating a thermodynamic property of a quantum Ising model with transverse field is disclosed. The method comprises obtaining an indication of a thermodynamic property to approximate for the quantum Ising model with transverse field; obtaining data representative of the quantum Ising model with transverse field; setting the quantum Ising model with transverse field using the obtained data representative of the quantum Ising model with transverse field on a quantum Ising model sampling device, the quantum Ising model sampling device being operatively coupled to a processing device and to a quantum Ising model sampling device control system; performing a plurality of measurements of the quantum Ising model with transverse field in a measurement axis using the quantum Ising model sampling device, each measurement providing a corresponding measured configuration; generating an effective classical Ising model corresponding to the quantum Ising model with transverse field; generating a plurality of effective configurations of the effective classical Ising model, each effective configuration comprising a set of more than one of the measured configurations; generating an approximation of the thermodynamic property of the effective classical Ising model using the generated plurality of effective configurations of the effective classical Ising model to approximate the thermodynamic property of the quantum Ising model with transverse field; and providing the approximation of the thermodynamic property.
Owner:1QB INFORMATION TECHNOLOGIES INC

Parameter inversion method of probability integral method based on quantum annealing method

The present invention relates to a parameter inversion method of a probability integral method based on a quantum annealing method. The method comprises: giving an initial value B0 of a parameter of the probability integral, and determining a temperature and transverse field variation function, a fluctuation range +/-[delta]B of each parameter of the probability integral, the maximum allowable step length scale of the parameter, and the number of times M of internal loops; by calculating the objective function under the gradually decreased temperature and transverse field, determining an optimal parameter solution at each temperature; and finally outputting the optimal parameter solution by determining the accuracy requirement or whether the minimum temperature and the transverse field arereached. According to the method disclosed by the present invention, based on inheriting the advantages of the simulated annealing method, the thermal fluctuation mechanism of the simulated annealingmethod is replaced by the quantum fluctuation mechanism, so that the shortcomings of the simulated annealing algorithm are effectively overcome; and compared with the parameter inversion method of the probability integral based on the simulated annealing, by using the method disclosed by the present invention, the convergence speed and the possibility of jumping out of the local optimal solutionare effectively improved, the global optimization ability is enhanced, and the parameter inversion of the probability integral can be more accurate and reliable.
Owner:ANHUI UNIV OF SCI & TECH

Field surface irrigation device

The invention discloses a field surface irrigation device. The field surface irrigation device comprises a water suction pump, wherein the water suction pump is connected with a water conveying main pipeline; a first gate valve, a filtering device, a water and fertilizer mixing device and a second gate valve are sequentially arranged on the water conveying main pipeline; a plurality of detachable branch pipelines are arranged on the water conveying main pipeline below the water outlet end of the second gate valve; a sub-control valve is arranged on each branch pipeline; the lower end of each branch pipeline is connected with a transverse field-in pipe; a plurality of gates are arranged at the side edge of each field-in pipe; the distance between the gates are consistent with the field distance; and a flow detector is arranged at the water outlet of each gate. The field surface irrigation device further comprises a temperature and humidity sensor, and the temperature and humidity sensor, the flow detector, the first gate valve, the second gate valve, the sub-control valve and the gates are in signal connection with a controller. The field surface irrigation device can supply both water and fertilizers during irrigation, saves manpower, material resources, water resources and time, greatly meets nutrition demands for crop growth, and facilitates automatic management.
Owner:FARMLAND IRRIGATION RES INST CHINESE ACAD OF AGRI SCI

Panoramic image splicing method for high-speed camera

The invention relates to a panoramic image splicing method for a high-speed camera, and the method comprises the steps: arranging the high-speed camera on a turntable, and setting the exposure interval of the high-speed camera at most to be the time experienced when the turntable angular displacement is equal to the transverse field angle of the camera; Enabling the rotary table to rotate for 360degrees at a constant speed, and meanwhile, enabling the high-speed camera to image a target according to the exposure interval; Wherein the turntable angular displacement corresponding to each original target image acquired by the high-speed camera is determined by the code disc value of the code disc; Sequencing all the original target images according to corresponding code disc values and imaging time, registering two adjacent original target images by adopting a nonlinear algorithm, and removing an overlapped area to obtain a duplicate-removed target image; And splicing all the target images subjected to duplicate removal according to the sequence to form a 360-degree panorama. According to the invention, the images are sorted by using the code disc values, the efficiency is high, andthe image splicing efficiency is improved, so that the panoramic image can be quickly obtained.
Owner:BEIJING INST OF ENVIRONMENTAL FEATURES

Isolated gate controlled transverse field emission transistor and driving method thereof

InactiveCN102856362AShipping restrictionsMeet the needs of process developmentSemiconductor/solid-state device manufacturingSemiconductor devicesField emission currentGate dielectric
The invention relates to an isolated gate controlled transverse field emission transistor and a driving method thereof. The transistor comprises a first gate dielectric layer, a first gate electrode, a collector electrode and an emitter electrode, wherein the first gate dielectric layer is provided with a first surface and a second surface which are opposite to each other; the first gate electrode is arranged on a first surface of the first gate dielectric layer; the collector electrode and the emitter electrode are arranged on a second surface of the first gate dielectric layer and at both sides of the first gate electrode; and the collector electrode and the emitter electrode are insulated from each other, and a gas is formed between the collector electrode and the emitter electrode. According to the invention, electric conduction is realized through a field emission current from the emitter electrode to the collector electrode in the field effect transistor, and a current switch of transverse field emission from the emitter electrode to the collector electrode is controlled by the first gate electrode at the same time, so that limitation in carrier transport by a lattice structure of a channel region in a conventional MOS ( field effect transistor) is eliminated, the need of process development can be met, and the transistor has a higher response speed.
Owner:INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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