54 results about "Plasma exposure" patented technology

Semiconductor patterns are formed by performing trimming simultaneously with the process of depositing the spacer oxide. Alternatively, a first part of the trimming is performed in-situ, immediately before the spacer oxide deposition process in the same chamber in which the spacer oxide deposition is performed whereas a second part of the trimming is performed simultaneously with the process of depositing the spacer oxide. Thus, semiconductor patterns are formed reducing PR footing during PR trimming with direct plasma exposure.

Reactive halogen-ion plasmas, having for example, generating chloride ions, generated from low-pressure halogen gases using a radio-frequency plasma are employed for producing low-friction carbon coatings, such as a pure carbon film, at or near room temperature on a bulk or thin film of a compound, such as titanium carbide.

Semiconductor patterns are formed by performing trimming simultaneously with the process of depositing the spacer oxide. Alternatively, a first part of the trimming is performed in-situ, immediately before the spacer oxide deposition process in the same chamber in which the spacer oxide deposition is performed whereas a second part of the trimming is performed simultaneously with the process of depositing the spacer oxide. Thus, semiconductor patterns are formed reducing PR footing during PR trimming with direct plasma exposure.

Provided herein are integration-compatible dielectric films and methods of depositing and modifying them. According to various embodiments, the methods can include deposition of flowable dielectric films targeting specific film properties and / or modification of those properties with an integration-compatible treatment process. In certain embodiments, methods of depositing and modifying flowable dielectric films having tunable wet etch rates and other properties are provided. Wet etch rates can be tuned during integration through am integration-compatible treatment process. Examples of treatment processes include plasma exposure and ultraviolet radiation exposure.

A method of reducing pathogens in blood by exposure to a nitric oxide containing gas in an extracorporeal circuitry is provided. The method includes: obtaining blood from a mammal or a blood source, separating the blood into plasma and blood cells, exposing the plasma to nitric oxide containing gas, combining the exposed plasma with the blood cells, reducing nitric oxide content in the recombined blood, and returning the blood to the mammal or blood source.

A method of manufacturing a tandem-type thin film photoelectric conversion device includes the steps of forming at least one photoelectric conversion unit (3) on a substrate (1) in a deposition apparatus, taking out the substrate (1) having the photoelectric conversion unit (3) from the deposition apparatus to the air, introducing the substrate (1) into a deposition apparatus and carrying out plasma exposure processing on the substrate (1) in an atmosphere of a gas mixture containing an impurity for determining the conductivity type of the same conductivity type as that of the uppermost conductivity type layer (33) and hydrogen, forming a conductivity type intermediate layer (5) by additionally supplying semiconductor raw gas to the deposition apparatus, and then forming a subsequent photoelectric conversion unit (4).

A method of manufacturing a tandem-type thin film photoelectric conversion device includes the steps of forming at least one photoelectric conversion unit (3) on a substrate (1) in a deposition apparatus, taking out the substrate (1) having the photoelectric conversion unit (3) from the deposition apparatus to the air, introducing the substrate (1) into a deposition apparatus and carrying out plasma exposure processing on the substrate (1) in an atmosphere of a gas mixture containing an impurity for determining the conductivity type of the same conductivity type as that of the uppermost conductivity type layer (33) and hydrogen, forming a conductivity type intermediate layer (5) by additionally supplying semiconductor raw gas to the deposition apparatus, and then forming a subsequent photoelectric conversion unit (4).

A nozzle for attachment to a cold plasma device configured to maintain delivery of a stable cold plasma. The nozzle can have many different shaped apertures to support different applications requiring different shaped cold plasma plumes. Use of a disc of foam material within a nozzle can expand the size of aperture of a nozzle while maintaining delivery of a stable cold plasma. The nozzle can be an elongated cannula tube for internal delivery of a cold plasma treatment. The cannula tube can provide an aperture at its distal end or one or more apertures along its length. A shroud can partially enclose the distal aperture of the nozzle. A sterile sleeve can be used in conjunction with a nozzle to provide a sterile means of attachment and operation of the nozzle with a cold plasma device. In addition, various shaped apertures may be deployed to provide selective targeting of the cold plasma to a treatment area, while shielding other biological structures from cold plasma exposure. Such apertures also provide an opportunity for manual manipulation of tissues in the treatment area prior to or during cold plasma treatment.

Provided herein are integration-compatible dielectric films and methods of depositing and modifying them. According to various embodiments, the methods can include deposition of flowable dielectric films targeting specific film properties and / or modification of those properties with an integration-compatible treatment process. In certain embodiments, methods of depositing and modifying flowable dielectric films having tunable wet etch rates and other properties are provided. Wet etch rates can be tuned during integration through am integration-compatible treatment process. Examples of treatment processes include plasma exposure and ultraviolet radiation exposure.

Disclosed are a plasma generator and a workpiece processing apparatus, wherein an adapter 38 is attached to a distal end of each of a plurality of plasma generation nozzles 31 to convert a spot-shaped spout port of the plasma generation nozzle 31 to a lengthwise sport port 387, and a cover member 93 is provided to cover the plasma generation nozzles 31 so as to allow a narrow space to be defined between the cover member 93 and a workpiece, whereby plasma spouted from the spout port 387 is retained in the space in such a manner as to hit against and rebound from the workpiece into the space. This makes it possible to subject a workpiece having a relatively large surface area to plasma exposure in a uniform manner, while suppressing cooling of plasma in the space to allow the plasma to survive for a relatively long period of time (reduce a plasma disappearance rate) so as to provide enhanced efficiency of plasma exposure.

A nozzle for attachment to a cold plasma device configured to maintain delivery of a stable cold plasma. The nozzle can have many different shaped apertures to support different applications requiring different shaped cold plasma plumes. Use of a disc of foam material within a nozzle can expand the size of aperture of a nozzle while maintaining delivery of a stable cold plasma. The nozzle can be an elongated cannula tube for internal delivery of a cold plasma treatment. The cannula tube can provide an aperture at its distal end or one or more apertures along its length. A shroud can partially enclose the distal aperture of the nozzle. A sterile sleeve can be used in conjunction with a nozzle to provide a sterile means of attachment and operation of the nozzle with a cold plasma device. In addition, various shaped apertures may be deployed to provide selective targeting of the cold plasma to a treatment area, while shielding other biological structures from cold plasma exposure. Such apertures also provide an opportunity for manual manipulation of tissues in the treatment area prior to or during cold plasma treatment.

Methods of forming a dispersion of nanostructures, a distribution of carbon nanotubes, and an array of nanostructure devices are described. The methods involve providing a substrate, applying growth promoter to at least a portion of the substrate, exposing the substrate and the growth promoter to a plasma, and forming a dispersion of nanostructures from the growth promoter after the plasma exposure. Exposing the substrate and the growth promoter to a plasma disperses at least a portion of the growth promoter as distinct, isolated growth promoter areas over the substrate. Preferably, the growth promoter areas are nanoparticles between about 1 nm and 50 nm in size and they are dispersed approximately uniformly over the substrate. An array of nanostructure devices is also described. The array of devices includes a substrate, a dispersion of nanostructures disposed discontinuously on the substrate and an array of electrodes in contact with the dispersion of nanostructures. The nanostructures may be nanotubes or nanowires. Preferably, the dispersion of nanostructures is approximately planar and substantially in contact with the substrate. Regions containing nanostructures can provide electrical communication between two or more electrodes.

A method is provided for forming a metal silicide layer on a substrate. According to one embodiment the method includes providing the substrate in a process chamber, exposing the substrate at a first substrate temperature to a plasma generated from a deposition gas containing a metal precursor, where the plasma exposure forms a conformal metal-containing layer on the substrate in a self-limiting process. The method further includes exposing the metal-containing layer at a second substrate temperature to a reducing gas in the absence of a plasma, where the exposing steps are alternatively performed at least once to form the metal silicide layer, and the deposition gas does not contain the reducing gas. The method provides conformal metal silicide formation in deep trenches with high aspect ratios.

The present invention relates to ultrathin atomic layer deposition film accuracy thickness control. Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.

Bulk direct transition metal dichalcogenide (TMDC) may have an increased interlayer separation of at least 0.5, 1, or 3 angstroms more than its bulk value. The TMDC may be a bulk direct band gap molybdenum disulfide (MoS2) or a bulk direct band gap tungsten diselenide (WSe2). Oxygen may be between the interlayers. A device may include the TMDC, such as an optoelectronic device, such as an LED, solid state laser, a photodetector, a solar cell, a FET, a thermoelectric generator, or a thermoelectric cooler. A method of making bulk direct transition metal dichalcogenide (TMDC) with increased interlayer separation may include exposing bulk direct TMDC to a remote (aka downstream) oxygen plasma. The plasma exposure may cause an increase in the photoluminescence efficiency of the TMDC, more charge neutral doping, or longer photo-excited carrier lifetimes, as compared to the TMDC without the plasma exposure.

Methods and apparatus for forming substrates having magnetically patterned surfaces is provided. A magnetic layer comprising one or more materials having magnetic properties is formed on a substrate. The magnetic layer is subjected to a patterning process in which selected portions of the surface of the magnetic layer are altered such that the altered portions have different magnetic properties from the non-altered portions without changing the topography of the substrate. A protective layer and a lubricant layer are deposited over the patterned magnetic layer. The patterning is accomplished through a number of processes that expose substrates to energy of varying forms. Apparatus and methods disclosed herein enable processing of two major surfaces of a substrate simultaneously, or sequentially by flipping. In some embodiments, magnetic properties of the substrate surface may be uniformly altered by plasma exposure and then selectively restored by exposure to patterned energy.

A PTFE resin sealing ring in which at least one surface of an abutting part that forms a discontinuity in the sealing ring has been subjected to a plasma-modification treatment using a non-polymerizable gas and a pressure during plasma exposure of 10 to 500 Pa. Since the abutting surface(s) of this PTFE resin sealing ring has / have been subjected to a low-pressure plasma treatment, changing the states of the C-F bonds in the surface region(s), the abutting part does not stick even after a steady load has been applied at a high temperature, producing the prominent effect of ensuring both sealing performance under pressure and the ability to slide when not under pressure. This sealing ring is effective as a sealing material used with rotation or reciprocal motion, including a hydraulic circuit in a continuously variable transmission (CVT) or an automatic transmission (A / T) in an automobile, for example.

Provided is a photoelectric conversion device in which the conductivity after hydrogen-plasma exposure is set within an appropriate range, thereby suppressing the leakage current and improving the conversion efficiency. A photoelectric conversion device includes, on a substrate, a photoelectric conversion layer having at least two power generation cell layers, and an intermediate contact layer provided between the power generation cell layers. The intermediate contact layer mainly contains a compound represented by Zn1-xMgxO (0.096≦x≦0.183).

The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, and a heater at the substrate support wherein the heater supplies the substrate with heat.

A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.

Reactive halogen-ion plasmas, having for example, generating chloride ions, generated from low-pressure halogen gases using a radio-frequency plasma are employed for producing low-friction carbon coatings, such as a pure carbon film, at or near room temperature on a bulk or thin film of a compound, such as titanium carbide.

A method is described for vapor phase etching of oxide material including at least one of hafnia (HfO2) and zirconia (ZrO2), in the absence of plasma exposure of the oxide material. The method involves contacting the oxide material with an etching medium including at least one of phosphorus chloride and tungsten chloride under conditions producing a removable fluid reaction product, and removing the removable fluid reaction product. The etching process may be controllably carried out by use of pressure swings, temperature swings, and / or modulation of partial pressure of Hf or Zr chloride in the reaction, e.g., to achieve precision etch removal in the manufacture of semiconductor devices such as 3D NAND, sub-20 nm DRAMs, and finFETs.

A method is described for vapor phase etching of oxide material including at least one of hafnia (HfO2) and zirconia (ZrO2), in the absence of plasma exposure of the oxide material. The method involves contacting the oxide material with an etching medium including at least one of phosphorus chloride and tungsten chloride under conditions producing a removable fluid reaction product, and removing the removable fluid reaction product. The etching process may be controllably carried out by use of pressure swings, temperature swings, and / or modulation of partial pressure of Hf or Zr chloride in the reaction, e.g., to achieve precision etch removal in the manufacture of semiconductor devices such as 3D NAND, sub-20 nm DRAMs, and finFETs.

The invention belongs to the technical field of medicines, and particularly relates to a chlorogenic acid long-circulating liposome as well as a preparation method and application thereof. According to the chlorogenic acid liposome disclosed by the invention, a lipid material containing PEGylated phospholipid is used as a membrane material, and chlorogenic acid active ingredients are entrapped, sothat the liposome with the average particle size of 50-500nm is prepared. The chlorogenic acid long-circulating liposome provided by the invention can prolong the residence time (MRT) of chlorogenicacid in blood, slow down the drug clearance rate (CLz) and improve the plasma exposure (AUC under a drug-time curve), and is beneficial to better exerting the biological effect of chlorogenic acid.

A method of making a semiconductor material by pretreating a semiconductor substrate having a native oxide on the substrate surface under vacuum with hydrogen plasma to remove and / or modify the native oxide. After plasma exposure, a high-k dielectric is deposited in-situ onto the substrate using atomic layer deposition. There is no break in the vacuum between the plasma exposure and the atomic layer deposition. Also disclosed is the related semiconductor / dielectric material stack.