The invention discloses a homotype heterostructure
IMPATT diode and a manufacturing method thereof. The
IMPATT diode comprises an n-type GaN substrate, an n++-GaN
cathode ohmic contact layer, an n-GaNdrift region, an n+-GaN avalanche region, an n++-InGaN
anode ohmic contact layer and an
anode which are sequentially arranged from bottom to top. The
passivation layer is located outside the
anode, and the
cathode is located on the upper layer of an annular table top formed by the n++-GaN
cathode ohmic contact layer2 and located outside the
passivation layer. Compared with a traditional GaN-basedIMPATT
diode, the homotype heterostructure
IMPATT diode adopting the homotype heterogeneous material has the advantages that the limitation of a P-type GaN
doping process is avoided, the efficiency of the IMPATT
diode is linearly improved along with the increase of the
doping concentration of an InGaN material, and high conversion efficiency is realized; according to the invention, n-type
semiconductor materials are adopted, i.e., n-type
doping is adopted, so that the efficiency of the manufacturing process is improved, the manufacturing cost is reduced, and meanwhile, the manufacturing process is completely compatible with the traditional IMPATT
diode packaging process.