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High-order frequency multiplier based on IMPATT (Impact Avalanche and Transit Time) diode

A frequency multiplier and diode technology, which is applied in the field of high-order frequency multipliers, can solve problems such as expensive manufacturing equipment and complicated processes, and achieve the effect of large output power

Inactive Publication Date: 2016-06-29
CNGC INST NO 206 OF CHINA ARMS IND GRP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But its technology is based on microwave single-chip integrated circuit, the manufacturing equipment is expensive, the process is complicated, and its frequency multiplication number is ≤8, and the output power is ≤13mW

Method used

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  • High-order frequency multiplier based on IMPATT (Impact Avalanche and Transit Time) diode
  • High-order frequency multiplier based on IMPATT (Impact Avalanche and Transit Time) diode
  • High-order frequency multiplier based on IMPATT (Impact Avalanche and Transit Time) diode

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Embodiment Construction

[0016] Now in conjunction with embodiment, accompanying drawing, the present invention will be further described:

[0017] The invention provides a new high-order frequency multiplier engineering realization scheme for generating high-frequency (20GHz to 180GHz) microwave full-phase coherent signals with frequency multiplication times of 3 to 30. Technical scheme content of the present invention is as follows:

[0018] 1. This high-order frequency multiplier includes an SMA coaxial connector through which the signal to be multiplied is input into the frequency multiplier; a feedthrough capacitor through which the bias current is input into the frequency multiplier; a PTFE- The bias microstrip circuit with glass fiber cloth as the medium; one end is welded on the microstrip line and the other end is welded on the gold strip of the upper electrode of the IMPATT diode; one IMPATT diode, the diode is fixed in the center of the T-shaped cavity by fixing screws ;A top adjustment pl...

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Abstract

The invention provides a high-order frequency multiplier based on IMPATT diodes. In the frequency multiplier, the IMPATT diodes work in an avalanche breakdown mode, and their strong nonlinear characteristics generate high-order harmonics of the input signal f. The top adjustment plug and the T-shaped cavity short-circuit piston are used to make the high-order frequency multiplier efficiently generate n×f frequency. The top adjustment plug is located directly above the upper electrode of the IMPATT diode. By adjusting the top adjustment plug, the resonant frequency of the T-shaped cavity can be adjusted to the frequency n×f, and the output energy can be effectively output toward the output end of the T-shaped cavity. . The output of the T-shaped cavity is connected to the input terminal of the isolator, and the output terminal of the isolator is connected to the filter. The filter is used to separate the required output frequency n×f and suppress other harmonic frequencies. This invention provides a high-order frequency multiplier scheme for generating microwave fully coherent signals in different frequency bands (20GHz to 180GHz), different frequency multiplication times (3 to 30 times), and output power of tens of milliwatts.

Description

technical field [0001] The invention belongs to the field of frequency synthesis technology and frequency generation technology, in particular to a high-order frequency multiplier based on IMPATT diodes. It is used in radio communication, measurement and other equipment that requires stable ultra-high frequency signals to achieve high-order frequency multiplication. This frequency multiplier has good versatility, scalability, and engineering ease. Background technique [0002] At this stage, frequency multipliers for high frequency bands (V band, W band, and D band) are mainly divided into two-terminal device frequency multipliers and three-terminal device frequency multipliers. The three-terminal device frequency multiplier is mainly based on microwave monolithic integrated circuits of HEMT and PHEMT. Compared with the two-terminal device frequency multiplier, it has the advantages of easy oscillation, input and output isolation, high drain efficiency, fully integrated plan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03B9/12
CPCH03B9/12H03B2009/126
Inventor 饶睿楠雷国忠糜光璞王栋周立学柳亮霞单军勇彭欢杨芳红张国强张生春杨军
Owner CNGC INST NO 206 OF CHINA ARMS IND GRP
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