A wide bandgap semiconductor heterojunction transit time diode noise detection method and system

A technology of wide bandgap semiconductor and transit time, which is applied in the field of wide bandgap semiconductor heterojunction transit time diode noise detection, can solve the problems of low detection accuracy and large error of diode noise, achieve superior performance and overcome large error , Overcome the effect of low noise detection accuracy

Active Publication Date: 2021-04-27
WENZHOU UNIV
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Problems solved by technology

[0007] The technical problem to be solved by the embodiments of the present invention is to provide a wide-bandgap semiconductor heterojunction transit time diode noise detection method and system, which can overcome the problems of low detection accuracy and large error of diode noise detection in the prior art

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  • A wide bandgap semiconductor heterojunction transit time diode noise detection method and system
  • A wide bandgap semiconductor heterojunction transit time diode noise detection method and system
  • A wide bandgap semiconductor heterojunction transit time diode noise detection method and system

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Embodiment Construction

[0041] In order to make the purpose, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0042] like figure 1 As shown, in the embodiment of the present invention, a wide bandgap semiconductor heterojunction transit time diode noise detection method is provided, including the following steps:

[0043] S1. Obtain the measured wide-bandgap semiconductor heterojunction transit time diode, and combine the noise influence factors of the measured wide-bandgap semiconductor heterojunction transit time diode to determine the measured wide-bandgap semiconductor heterojunction transit time The continuity equation, current density equation, and Poisson equation preset by the diode are corrected; among them, the measured wide-bandgap semiconductor heterojunction transit time diode is an impact ionization avalanche transit time IMPATT diode or a hybrid tunneling ...

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Abstract

The invention provides a wide bandgap semiconductor heterojunction transit time diode noise detection method and system, including obtaining the diode under test (DUT), and selecting corresponding noise factors including ionization avalanche effect, quantum effect, and field-induced tunneling effect , modify the preset continuity equation, current density equation and Poisson equation; where, DUT is the impact ionization avalanche transit time IMPATT diode or the hybrid tunneling avalanche transit time MITATT diode; grid the DUT model, the modified Discretize the equation system consisting of the continuity equation, current density equation and Poisson equation; solve the discretized equation system to obtain the structure, steady-state performance, and AC performance; build a noise model, and combine the structure, steady-state performance, and The AC performance parameter values ​​are imported into the noise model and the boundary conditions for double iterative calculation to obtain the noise parameter values ​​of the DUT. The implementation of the invention can improve the noise detection accuracy of the DUT.

Description

technical field [0001] The invention relates to the technical field of diode detection, in particular to a method for detecting noise of a wide bandgap semiconductor heterojunction transit time diode. Background technique [0002] Impact Ionization Avalanche Transit Time (IMPATT) diodes and Mixed Tunneling Avalanche Transit Time (MITATT) diodes are terahertz (THz) diodes with high efficiency, low cost and broad application prospects. wave solid-state power source. The IMPATT diode is a semiconductor device that uses the combination of the injection delay effect of the ionization avalanche multiplied carrier and the carrier drift transit delay effect to produce a negative resistance effect; the MITATT diode uses the field-induced tunneling and ionization avalanche to multiply the carrier injection The combination of the delay effect and the carrier drift transition delay effect produces a semiconductor device with a negative resistance effect. Ionization avalanche plays a m...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2632
Inventor 韦文生余寿豪张夏彬莫越达黄文喜周迪何明昌
Owner WENZHOU UNIV
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