45results about How to "Reduce voltage overshoot" patented technology

A semiconductor thyristor device that incorporates buried region breakdown junctions laterally offset from an emitter region. By spacing the buried regions around the emitter region, current carriers emitted from the buried regions are distributed over a large area of the emitter region, thereby providing a high current capability during initial turn on of the device. In order to achieve low breakover voltage devices, the buried regions are characterized with high impurity concentrations, with the breakdown junctions located near the surface of the chip. The low voltage thyristor device minimizes the area of high dopant concentration junctions, thus minimizing the chip capacitance and permitting high speed, low voltage signal operation.

An apparatus includes an inverter including a high-side switch coupled to a low-side switch, the inverter generating a time-varying drive current from a plurality of drive control signals, a positive rail voltage, and a negative rail voltage wherein controlling the switches to generate the time-varying drive current produces a potential transitory overshoot condition for one of the switches of the inverter; a drive control, coupled to the inverter, to generate the drive control signals and to set a level of each of the rail voltages responsive to a plurality of controller signals; and a controller monitoring one or more parameters indicative of the potential transitory voltage overshoot condition, the controller dynamically adjusting, responsive to the monitored parameters, the controller signals to reduce a risk of occurrence of the potential transitory voltage overshoot condition.

An apparatus includes an inverter including a high-side switch coupled to a low-side switch, the inverter generating a time-varying drive current from a plurality of drive control signals, a positive rail voltage, and a negative rail voltage wherein controlling the switches to generate the time-varying drive current produces a potential transitory overshoot condition for one of the switches of the inverter; a drive control, coupled to the inverter, to generate the drive control signals and to set a level of each of the rail voltages responsive to a plurality of controller signals; and a controller monitoring one or more parameters indicative of the potential transitory voltage overshoot condition, the controller dynamically adjusting, responsive to the monitored parameters, the controller signals to reduce a risk of occurrence of the potential transitory voltage overshoot condition.

According to example embodiments, a substrate for a power module includes first to third parts spaced apart from each other, where the third part surrounds the first and second parts, and a conductive layer on the first to third parts. A terminal of a first polarity is connected to the first part, and a terminal of a second polarity is connected to the second part. The first and second terminals may be spaced apart from each other and each have a coupling part, a body, and a contact part. The bodies of the first and second terminals may overlap each other. A power module may include the substrate.

An apparatus includes an inverter including a high-side switch coupled to a low-side switch, the inverter generating a time-varying drive current from a plurality of drive control signals, a positive rail voltage, and a negative rail voltage wherein controlling the switches to generate the time-varying drive current produces a potential transitory overshoot condition for one of the switches of the inverter; a drive control, coupled to the inverter, to generate the drive control signals and to set a level of each of the rail voltages responsive to a plurality of controller signals; and a controller monitoring one or more parameters indicative of the potential transitory voltage overshoot condition, the controller dynamically adjusting, responsive to the monitored parameters, the controller signals to reduce a risk of occurrence of the potential transitory voltage overshoot condition.

The invention relates to a traction converter of a straddle type monorail train. The traction converter comprises a main circuit module and a control circuit, wherein the main circuit module is provided with a pre-charge circuit, an overvoltage protection circuit, an input filtering circuit and a traction inverter circuit module; the control circuit comprises a traction controller TCU (tape control unit), a current sensor and a voltage sensor; the traction controller TCU is respectively connected with the current sensor and the voltage sensor and used for collecting voltage, current and rotary speed signal to control the output of the traction inverter circuit and finish the voltage protection. Modularized design is adopted in the main circuit of the traction converter of the straddle type monorail train, so that the volume is small, and the weight is light, wherein an IGBT (insulated gate bipolar translator) power semiconductor technology is selected in the traction inverter circuit module, the high switching frequency control is allowed, and a composite laminated bus bar with stray inductance is adopted, so that the voltage overshoot produced by the stray inductance of the circuit under the higher di / dt action can be reduced while IGBT is cut off, the probability for damaging the IGBT is reduced, and the reliability of the system is high.

An apparatus includes an inverter including a high-side switch coupled to a low-side switch, the inverter generating a time-varying drive current from a plurality of drive control signals, a positive rail voltage, and a negative rail voltage wherein controlling the switches to generate the time-varying drive current produces a potential transitory overshoot condition for one of the switches of the inverter; a drive control, coupled to the inverter, to generate the drive control signals and to set a level of each of the rail voltages responsive to a plurality of controller signals; and a controller monitoring one or more parameters indicative of the potential transitory voltage overshoot condition, the controller dynamically adjusting, responsive to the monitored parameters, the controller signals to reduce a risk of occurrence of the potential transitory voltage overshoot condition.

A system and method for controlling a grid-connected reactive power compensation inverter. The system uses a combination of feedforward and feedback controls to compute a reference voltage signal based on sensor-measured voltages and currents, where the reference voltage signal is used to control the inverter switches. The disclosed method modifies a cross-couple feedforward signal used in the reference voltage calculations, where the modified cross-couple signal includes a combination of both reference and actual currents, and the modified control scheme reduces the DC-link voltage overshoot experienced during a capacitive overload event while still providing the required reactive power and maintaining grid system stability.

The reference voltage generator for a switch mode regulator includes: a reference voltage source; a soft-start voltage generator; and a comparator having a directional offset for comparing an output of the reference voltage source with an output of the soft-start voltage generator. Because of the intentional directional offset, the pass switch does not turn ON during the transition from the ramp voltage to reference voltage, therefore reducing energy stored in the inductor. Thus the voltage overshoot is reduced during the end of the soft-start cycle.

An apparatus includes an inverter including a high-side switch coupled to a low-side switch, the inverter generating a time-varying drive current from a plurality of drive control signals, a positive rail voltage, and a negative rail voltage wherein controlling the switches to generate the time-varying drive current produces a potential transitory overshoot condition for one of the switches of the inverter; a drive control, coupled to the inverter, to generate the drive control signals and to set a level of each of the rail voltages responsive to a plurality of controller signals; and a controller monitoring one or more parameters indicative of the potential transitory voltage overshoot condition, the controller dynamically adjusting, responsive to the monitored parameters, the controller signals to reduce a risk of occurrence of the potential transitory voltage overshoot condition.

An apparatus includes an inverter including a high-side switch coupled to a low-side switch, the inverter generating a time-varying drive current from a plurality of drive control signals, a positive rail voltage, and a negative rail voltage wherein controlling the switches to generate the time-varying drive current produces a potential transitory overshoot condition for one of the switches of the inverter; a drive control, coupled to the inverter, to generate the drive control signals and to set a level of each of the rail voltages responsive to a plurality of controller signals; and a controller monitoring one or more parameters indicative of the potential transitory voltage overshoot condition, the controller dynamically adjusting, responsive to the monitored parameters, the controller signals to reduce a risk of occurrence of the potential transitory voltage overshoot condition.

A switching circuit includes a semiconductor switch having a Gate terminal, and includes first, second, third, and fourth Gate resistors. The Gate resistors have upstream and downstream ends relative to a location of the semiconductor switch or a driven load. The downstream ends connect to the Gate terminal. First, second, third, and fourth buffer switches have Gate terminals and Source terminals, with the Source terminals connected to the upstream ends of the first, second, third, and fourth Gate resistors, respectively. An optional Gate driver integrated circuit (IC) connects to the Gate terminals of the buffer switches. A microcontroller, responsive to circuit measurements, selects switching control values and Gate resistor identities based on the measurements, and transmits switching control signals and a Gate resistor selection signal to select on / off states of the buffer switches and an optimum switching speed for the semiconductor switch.

The invention relates to a compact power module, which comprises a copper radiating substrate, a shell and a circuit structure packaged in the shell, wherein the shell comprises a shell and an outer cover laid on the shell; the circuit structure comprises a power terminal, a signal terminal, an insulated ceramic substrate, an insulated gate bipolar translator (IGBT) chip and a diode chip; the height of the shell is 15 to 18 millimeters, preferably 17 millimeters; and the part, exposed from the outer cover of the module, of power terminal is folded at a required angle.

The invention discloses a fault diagnosis method for a high-voltage system of a pure electric bus. The high-voltage system of the pure electric bus consists of a power battery, a BMS high-voltage acquisition module, a four-in-one motor controller, a motor, an air conditioner, an oil pump, an air pump, a DCDC and a storage battery. A power battery model comprises an SOC, a terminal voltage, an internal resistance and a Pack module; a high-voltage cabinet model is an actuating mechanism for simulating the main and negative battery contactors and the action of the contactors, and completes the control of the main and negative battery contactors by closing and opening instructions from a vehicle control unit; the four-in-one motor controller is a simulation pre-charging contactor, a main motor contactor, an auxiliary pre-charging and an auxiliary contactor, and is an actuator including the contactor operations, and completes the control of the contactors by closing and opening instructions from the vehicle control unit.

The invention provides a test method for preventing high-voltage PAD burning, and the method comprises the steps: providing a tested chip and a test machine, enabling the tested chip to be provided with a charge pump and a welding pad, enabling the charge pump and the welding pad to be connected through a switch, enabling the welding pad to be connected with the test machine, applying a first voltage to the welding pad, and then opening the switch;starting the charge pump to output a second voltage; increasing the first voltage to a third voltage, wherein the third voltage is smaller than thesecond voltage; cutting off the third voltage on the welding pad to enable the voltage on the welding pad to rise from the third voltage to the second voltage; and testing the second voltage output bythe charge pump on the welding pad by using a testing machine. According to the invention, the voltage is applied to the welding pad in advance, and then slowly rises to reduce the voltage overshootgenerated during the high-voltage starting output of the charge pump, so that the risk that the test welding pad is damaged by the high-voltage overshoot is avoided, and the yield is improved.

According to example embodiments, a substrate for a power module includes first to third parts spaced apart from each other, where the third part surrounds the first and second parts, and a conductive layer on the first to third parts. A terminal of a first polarity is connected to the first part, and a terminal of a second polarity is connected to the second part. The first and second terminals may be spaced apart from each other and each have a coupling part, a body, and a contact part. The bodies of the first and second terminals may overlap each other. A power module may include the substrate.

A voltage generating unit generates a standard output voltage and sends to a voltage output side. A voltage detection unit detects a voltage of the voltage output side and informs a voltage gain control unit. When the voltage of the voltage output side is decreasing due to a dynamic load, the voltage gain control unit is configured to control the voltage generating unit to increase a gain of a voltage generated by the voltage generating unit, and the voltage generated by the voltage generating unit is lower than the standard output voltage. Then, the voltage gain control unit is configured to control the voltage generating unit to decrease the gain of the voltage generated by the voltage generating unit, and the voltage generated by the voltage generating unit is equal to the standard output voltage.

The invention discloses a multichip system capable of realizing reset and a control method of multichip reset. In the invention, all electrified chips sharing the same output power supply are triggered to reset by the different reset signals output by time division rather than the same reset signal, so that all the electrified chips for which the same output power source supplies power are not triggered to reset simultaneously, thus the rate of change of load current of the output power source is lower whenever the chips are reset, thereby decreasing the difference of two squares of instantaneous current changes when the electrified chips are reset, and reducing the voltage overshooting caused by the resets of the electrified chips.

The invention discloses a power chip crimping packaging structure and a manufacturing method thereof. The power chip crimping packaging structure comprises a bottom plate, and the bottom plate is provided with a plurality of IGBT chips and a plurality of copper-clad ceramic plates. Each IGBT chip and each copper-clad ceramic plate are respectively provided with a metal column, and the top surfaces of the metal columns are located on the same horizontal plane. The bottom surface of a flexible metal plate covers and is in contact with the top surfaces of the metal columns; a plurality of auxiliary emitting electrode leading-out terminals are arranged on the top surface of the flexible metal plate, and the auxiliary emitting electrode leading-out terminals are electrically contacted with the flexible metal plate; a multi-layer PCB is positioned above the flexible metal plate, and the multi-layer PCB is electrically contacted with the plurality of auxiliary emitting electrode leading-out terminals; the multi-layer PCB is provided with a through hole penetrating through the multi-layer PCB; and an emitter electrode is located above the multi-layer PCB, the emitter electrode is provided with a plurality of crimping arms, and the plurality of crimping arms penetrate through the through holes of the multi-layer PCB to be crimped with the flexible metal plate.

A system and method for controlling a grid-connected reactive power compensation inverter. The system uses a combination of feedforward and feedback controls to compute a reference voltage signal based on sensor-measured voltages and currents, where the reference voltage signal is used to control the inverter switches. The disclosed method modifies a cross-couple feedforward signal used in the reference voltage calculations, where the modified cross-couple signal includes a combination of both reference and actual currents, and the modified control scheme reduces the DC-link voltage overshoot experienced during a capacitive overload event while still providing the required reactive power and maintaining grid system stability.

An apparatus and system are provided to adjust an output voltage of an integrated circuit (IC) die. For instance, the apparatus can include an on-chip source termination and a bias generator. The bias generator can be configured to provide a source current to the on-chip source termination to adjust the output voltage. In particular, when adjusting the output voltage of the IC die, the bias generator can adjust the source current using a first current with a first adjustable current gain and a second current source with a second adjustable current gain.

The invention discloses a driving circuit with a short-circuit protection function suitable for a high-voltage solid-state power controller, the driving circuit comprises an after-connection short-circuit protection module and an after-short-circuit connection protection module, the after-connection short-circuit protection module comprises a driving chip W2, a capacitor C16, a capacitor C24 and a resistor GR1; the after-short-circuit connection module comprises a driving chip W1 and a resistor GR2. According to the invention, the logic signal of the input end of the driving chip is controlled, the voltage change of the output end of the driving chip is controlled, and a capacitor, resistor and diode combined circuit connected with the driving chip is matched, so that the control of the SiC MOSFET grid charge discharging process is realized, and the short-circuit protection functions of short circuit after connection and connection after short circuit are realized. According to the invention, the short-circuit protection function design of the high-voltage solid-state power controller is realized at low cost, and the method has great significance for the production of high-reliability and high-integration solid-state power controller products.

The invention discloses a novel SiC MOSFET oscillation suppression circuit applied to a half-bridge circuit. The circuit is characterized in that a direct current bus is connected with a drain electrode of a second SiC MOSFET, one end of a second clamping capacitor and one end of a first feedback module, and a source electrode of the second SiC MOSFET is connected with a negative electrode of a second collection diode, a load end, a positive electrode of the first collection diode and a drain electrode of a first SiC MOSFET; the positive electrode of the second collection diode and the other end of the second clamping capacitor are connected with one end of the second feedback module, and the negative electrode of the first collection diode is connected with one end of the first clamping capacitor and the other end of the first feedback module; the low-voltage source is connected with the source electrode of the first SiC MOSFET, the other end of the second clamping capacitor and the other end of the second feedback module, overvoltage can be effectively suppressed by the circuit, and the clamping capacitor in the circuit can feed energy back to the direct current side through theinductance branch and participates in the circuit process only when overvoltage is generated.

The invention discloses a fast recovery diode in the field of semiconductor power devices. The fast recovery diode includes an N+ type of silicon single crystal substrate, an N- type of epitaxial layer, a plurality of P+ type of blocks, and a P- type of main junction. The N- type of epitaxial layer is disposed above the N+ type of silicon single crystal substrate. The P- type of main junction is disposed above the N- type of epitaxial layer. The P+ type of blocks are arranged between the N+ type of silicon single crystal substrate and the N- type of epitaxial layer. A front metal layer is disposed above the P- type of main junction. A back metal layer is disposed under the N+ type of silicon single crystal substrate. The fast recovery diode has extremely short reverse recovery time, fast turn-on and turn-off capabilities, has extremely low current oscillation and voltage overshoot, and improves the stability and reliability of a device.

The invention discloses a short-circuit-fault-resistant and explosion-suppression power device, and belongs to the technical field of power electronic devices. The power device comprises a direct current anode power terminal, a direct current cathode power terminal, two alternating current power terminals and a plurality of power semiconductor chips. The first commutation loop and the second commutation loop in the power device are decoupled in the device, so that a short-circuit fault current path comprises two alternating-current power terminals, the inductance of the short-circuit loop is increased, and the rise rate and the amplitude of the short-circuit current are inhibited. A fuse or a thermosensitive element is connected to the alternating-current power terminal, so that suppression of the rise rate and the amplitude of the short-circuit current is further realized. The configuration design does not affect the normal operation of the power device, can realize the collaborative optimization of the commutation loop inductance and the short-circuit endurance capability of the power device, and has the functions of autonomously suppressing the short-circuit fault current and preventing the device from explosion.

A semiconductor switching string including a series-connected switching assemblies. Each assembly has a main switching element including first and second connection terminals which current flows between when the main switching element is on. The main element has an auxiliary element between the connection terminals. The string includes a local control unit connected with each auxiliary element which are programmed to switch an auxiliary element to create an alternative current path between the connection terminals that diverts current through to reduce the voltage across the corresponding main switching element. The local unit is programmed to control switching an auxiliary element to a fully-on mode in which the auxiliary element is at maximum rated base current, a pulsed mode which turns the auxiliary element on and off and / or an active mode operating the auxiliary element with a continuously variable base current. The string includes a higher level control unit programmed to implement the modes.

The invention discloses a multi-chip wide bandgap power module packaging structure based on the interconnection of conductive metal clips, including power substrates, conductive metal clips, power terminals, drive terminals and electronic power semiconductor chips, suitable for multiple wide High-current level power modules with band-gap semiconductor power chips connected in parallel. A number of series or parallel power electronic power semiconductor chips are arranged on the conductive metal substrate on the upper surface of the power substrate; in the power circuit, a conductive metal clip is used to replace the traditional aluminum bonding wire to complete the electrical connection of the power circuit in the power module; the conductive metal The layout design of the clip greatly improves the distribution uniformity of the parasitic inductance of the parallel branch in the power module, achieving the effect of parallel chip current sharing; the same spacing between adjacent chips ensures that the heat dissipation conditions are almost the same, achieving the effect of chip temperature uniformity; The shape design of the conductive metal clip connector reduces the thermal-mechanical stress generated by the work and improves the reliability of the power module; the heat transfer capability of the conductive metal clip enables the power module to achieve a double-sided heat dissipation structure.

The invention relates to a switching power supply circuit and system. A switch control module outputs a first switching signal when a reference voltage is greater than a preset voltage value, and outputs a second switching signal when the reference voltage is less than the preset voltage value. When the switching power supply circuit is shut down and the reference voltage is smaller than the preset voltage value, the first switching end and the second switching end of the semiconductor switching device can be switched on, and a semiconductor switching device discharges the voltage of a capacitor providing the reference voltage. Based on this, the process that a soft start circuit outputs a proportion voltage control signal to the switching power supply power stage to carry out soft start is not affected, a surge current and the voltage overshoot are effectively reduced, and the reliability of the switching power supply circuit is improved.

The invention discloses a super-junction appliance. A current flow area comprises a plurality of N type thin layers and P type thin layers which are alternately arranged, wherein the bottoms of the N type thin layers and P type thin layers are in contact with an N+ silicon substrate at the bottom; the N type thin layers include two types; the two types of N type thin layers comprise high-resistance parts in the middle and low-resistance parts on the two sides; the charges of the first type of N type thin layers and the P type thin layers are balanced; the high-resistivity parts of the second type of N type thin layers are relatively wide; the charges of the second type of N type thin layers and the P type thin layers are not balanced. After the P type thin layers perform transverse consumption on the second type of N type thin layers, with the increase of reverse bias voltage, P traps on the tops of the N type thin layers perform gradually expanded longitudinal consumption on the high-resistance parts of the second type of N type thin layers. The invention also discloses a manufacturing method of the super-junction appliance. The reverse recovery characteristics of the appliance can be improved, the proportional conduction resistance is relatively low, and dependency of the appliance to a ditch process can be improved.