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37results about How to "Reduce photomask process" patented technology

Array substrate for fringe field switching mode liquid crystal display device and method of fabricating the same

An array substrate for a liquid crystal display (LCD) device includes a common line and gate lines. The array substrate includes a first, second, and third passivation layer and thin film transistors (TFTs). The second passivation layer includes first and second holes respectively corresponding to a drain electrode and the common line. A common electrode on the second passivation layer includes a first opening corresponding to the TFTs and a second opening in the second hole. A drain contact hole through the third and first passivation layers exposes the drain electrode. A first common contact hole through the third passivation layer exposes the common electrode in the second hole. A second common contact hole through the third and first passivation layers exposes the common line, and a pixel electrode includes a third opening and a connection pattern connecting the common electrode to the common line on the third passivation layer.
Owner:LG DISPLAY CO LTD

Storage structure and preparation method thereof

The invention provides a storage structure and a preparation method thereof. The preparation method comprises the following steps of: providing a semiconductor substrate, wherein a plurality of interlay medium layers and virtual medium layers which are overlapped in a staggered manner are formed on the surface of the semiconductor substrate, and the virtual medium layers are formed between adjacent interlay medium layers; etching the interlay medium layers, the virtual medium layers and a part of the semiconductor substrate so as to form grooves; forming epitaxial layers at the bottoms of the grooves, wherein the upper surfaces of the epitaxial layers do not exceed the upper surfaces of the interlay medium layers; sequentially forming partitioning medium layers and polycrystalline silicon layers on side walls of the grooves. According to the storage structure, as the epitaxial layers are only formed at the bottoms of the grooves, the time for selective extension is shortened, and meanwhile a photomask process can be reduced. In addition, the upper surfaces of the epitaxial layers do not exceed the upper surfaces of the interlay medium layers, so that the total height of the interlay medium layers and the virtual medium layers on the semiconductor substrate can be reduced. The storage structure is relatively good in controllability of threshold voltage of a selecting grid in programming operation of a memory.
Owner:WUHAN XINXIN SEMICON MFG CO LTD

Method for fabricating thin film transistor substrate

A method of fabricating a thin film transistor substrate for reducing a mask process and, at the same time removing a transparent electrode ITO which remains at a non-display area by a contact hole filling process is disclosed. In the method of fabricating the thin film transistor substrate having a display area and a non-display area where is located at the exterior of the display area, a gate pattern, which is comprised of a gate line which is formed at a display area, a gate electrode which is connected to a gate line, a gate link which is formed at a non-display area, and a lower gate pad electrode which is connected, via a gate link, to a gate line, is formed. A gate insulating film is formed on a substrate provided with a gate pattern, and then a data pattern, which is comprised of a data line which is formed at a display area and is crossed with a gate line, a source electrode and a drain electrode which are connected to a data line, a data link which is formed at a non-display area, and a lower data pad electrode which is connected, via a data link, to a data line, is formed. And a protective film is formed on an entire substrate provided with a data pattern, and then a conductive pattern, which is comprised of a pixel electrode which is formed at a display area by a contact hole filling process using a smoothing material, and a lower gate pad electrode and a lower data pad electrode which are formed at a non-display area, is formed.
Owner:LG DISPLAY CO LTD

Flat panel display device and method of manufacturing the same

A flat panel display includes a pixel electrode having an opening portion formed on an insulating substrate, a semiconductor layer formed over a surface of the insulating substrate, spaced apart from the pixel electrode, having source and drain regions formed to both end portions thereof, a first insulating layer formed over the surface of the insulating substrate excluding the opening portion of the pixel electrode, a gate electrode formed on the first insulating layer over the semiconductor layer, and a second insulating layer formed over the surface of the insulating substrate excluding the opening portion of the pixel electrode. The present invention provides an organic EL display manufactured with reduced mask processes which has excellent electrical characteristics and improved light transmittance.
Owner:SAMSUNG DISPLAY CO LTD

Display device and method for manufacturing the same

A display device and a method of the display device are provided. The display device includes a lower metal layer on a substrate, a buffer layer on the lower metal layer, a first semiconductor layer on the buffer layer, a gate insulating layer on the first semiconductor layer, a first gate electrode on the gate insulating layer, an interlayer insulating layer on the first gate electrode, a via layer on the interlayer insulating layer, a pixel electrode on the via layer and electrically connected to the first semiconductor layer, a light emitting layer on the pixel electrode, a common electrode on the light emitting layer, a first contact hole penetrating the buffer layer and the interlayer insulating layer and a second contact hole penetrating the interlayer insulating layer, and a first via hole and a second via hole each penetrating the via layer.
Owner:SAMSUNG DISPLAY CO LTD

Processing method for array substrate and display panel

The invention discloses a processing method for an array substrate and a display panel. The method comprises a step of forming a gate metal layer and a gate insulating layer on a glass substrate, a step of forming a semiconductor layer on the gate insulating layer and forming an etching stop layer at a trench position of a thin film transistor, a step of forming a metal layer on the etching stop layer, depositing a photoresist on the metal layer, performing a light mask process on a light mask and exposing and developing to form a photoresist layer with a predetermined shape, a step of etchingto obtain a source electrode and a drain electrode, a step of performing post-baking on a photoresist layer remaining on the source electrode and the drain electrode such that the photoresist layer flows to the trench position, a step of etching a semiconductor layer and obtaining a predetermined pattern, a step of stripping the photoresist layer on the source electrode, the drain electrode and the trench position, and a step of forming a passivation layer and a conductive thin film layer on the source electrode, the drain electrode, and the channel locations. According to the invention, themask process can be reduced, and the production cost is effectively reduced.
Owner:HKC CORP LTD
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