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Thin film transistor and manufacturing method thereof

A technology of thin film transistors and manufacturing methods, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., and can solve problems such as storage capacitance reduction

Active Publication Date: 2019-04-19
NANJING CEC PANDA LCD TECH
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  • Description
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Problems solved by technology

[0004] In addition, there are also some existing technologies that realize the 5-pass photomask process (pixel electrode / gate→gate insulating layer / active layer→source drain→insulating protective layer→common electrode / contact electrode), but this method produces The intermediate protective layer of the pixel electrode and the common electrode in the pixel area of ​​the thin film transistor is generally 8125 Å, and this too thick intermediate protective layer will lead to a decrease in the storage capacitance

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  • Thin film transistor and manufacturing method thereof
  • Thin film transistor and manufacturing method thereof
  • Thin film transistor and manufacturing method thereof

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Embodiment Construction

[0052] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the specific implementation manners of the present invention will be described below with reference to the accompanying drawings. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention, and those skilled in the art can obtain other accompanying drawings based on these drawings and obtain other implementations.

[0053] In order to make the drawing concise, each drawing only schematically shows the parts related to the present invention, and they do not represent the actual structure of the product. In addition, to make the drawings concise and easy to understand, in some drawings, only one of the components having the same structure or function is schematically shown, or only one of them is marked. Herein, "a" not only means "only one", but also means "more than one".

[0054] The techni...

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Abstract

The invention provides a thin film transistor and a manufacturing method thereof, and relates to the technical field of liquid crystal display. The manufacturing method of an oxide thin film transistor, in combination with a traditional 6Mask process (gate, semiconductor layer / source drain, organic insulating layer, common electrode, second insulating layer, pixel electrode), constructs the commonelectrode (Com electrode) on a bottom layer. The common electrode and the gate are completed at a time to reduce a mask process (achieved by semi-transparent mask multi-stage exposure), so as to forma bottom Com architecture. In addition, an organic insulating film is not required, and an FFS array substrate is manufactured in four mask processes. Further, an intermediate protective layer of thepixel electrode and the common electrode in the pixel region of the thin film transistor has a suitable thickness (2000 angstroms to 8000 angstroms) required to form a storage capacitor.

Description

technical field [0001] The invention belongs to the field of liquid crystal display, and in particular relates to a thin film transistor and a manufacturing method thereof. Background technique [0002] Fringe Field Switching (FFS for short) technology is a current liquid crystal display technology and a wide viewing angle technology developed to solve large-size, high-definition desktop monitors and LCD TV applications. FFS LCD panels have the advantages of fast response time, high light transmittance, and wide viewing angles. However, since FFS LCD panels are made of two layers of indium tin oxide (ITO for short), the manufacturing process of FFS LCD panels requires One or two more photomask (reticle) processes than ordinary LCD panels. [0003] In order to reduce costs, increase production capacity, and enhance the competitiveness of oxide thin film transistors, further research on the reduction of the number of photomasks is required. In the existing technology, compar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786G02F1/1362H01L21/336
CPCG02F1/1362G02F1/136231H01L29/66742H01L29/786
Inventor 董波简锦诚郑帅朱熙
Owner NANJING CEC PANDA LCD TECH
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