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Processing method for array substrate and display panel

An array substrate and glass substrate technology, applied in the display field, can solve problems such as time and cost increase, and achieve the effects of improving yield, good etching barrier, and reducing mask manufacturing process

Inactive Publication Date: 2019-03-26
HKC CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the TFT process of the ESL structure requires 6 masks, which increases the time and cost compared to the 5 mask process.

Method used

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  • Processing method for array substrate and display panel
  • Processing method for array substrate and display panel
  • Processing method for array substrate and display panel

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Embodiment Construction

[0047] Specific structural and functional details disclosed herein are representative only and for purposes of describing example embodiments of the present invention. This invention may, however, be embodied in many alternative forms and should not be construed as limited to only the embodiments set forth herein.

[0048] In describing the present invention, it is to be understood that the terms "central", "lateral", "upper", "lower", "left", "right", "vertical", "horizontal", "top", The orientation or positional relationship indicated by "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying the referred device Or elements must have a certain orientation, be constructed and operate in a certain orientation, and thus should not be construed as limiting the invention. In addition, the te...

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Abstract

The invention discloses a processing method for an array substrate and a display panel. The method comprises a step of forming a gate metal layer and a gate insulating layer on a glass substrate, a step of forming a semiconductor layer on the gate insulating layer and forming an etching stop layer at a trench position of a thin film transistor, a step of forming a metal layer on the etching stop layer, depositing a photoresist on the metal layer, performing a light mask process on a light mask and exposing and developing to form a photoresist layer with a predetermined shape, a step of etchingto obtain a source electrode and a drain electrode, a step of performing post-baking on a photoresist layer remaining on the source electrode and the drain electrode such that the photoresist layer flows to the trench position, a step of etching a semiconductor layer and obtaining a predetermined pattern, a step of stripping the photoresist layer on the source electrode, the drain electrode and the trench position, and a step of forming a passivation layer and a conductive thin film layer on the source electrode, the drain electrode, and the channel locations. According to the invention, themask process can be reduced, and the production cost is effectively reduced.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a method for manufacturing an array substrate and a display panel. Background technique [0002] With the development and progress of science and technology, liquid crystal displays have become the mainstream products of displays due to their thin body, power saving and low radiation, and have been widely used. Most of the liquid crystal displays currently on the market are backlight liquid crystal displays, which include a liquid crystal panel and a backlight module. The working principle of the liquid crystal panel is to place liquid crystal molecules between two parallel glass substrates, and apply a driving voltage on the two glass substrates to control the rotation direction of the liquid crystal molecules, so as to refract the light from the backlight module to produce a picture. [0003] Among them, Thin Film Transistor-Liquid Crystal Display (TFT-LCD) has gradua...

Claims

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Application Information

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IPC IPC(8): H01L21/84G02F1/1362
CPCH01L27/1288G02F1/1362G02F1/136295H01L29/78696H01L29/66969H01L27/1225H01L21/3086G02F1/1368H01L27/1237
Inventor 黄北洲
Owner HKC CORP LTD
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