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A double-layer passivation film for front contact passivation and preparation method thereof

A technology of front contact and passivation film, which is applied in the field of solar cells, can solve problems such as limiting the efficiency of PERC cells, and achieve the effect of less parasitic absorption

Active Publication Date: 2020-10-16
RISEN ENERGY (CHANGZHOU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the bottleneck that limits the efficiency of PERC cells is the front side of the battery, and people have begun to think about how to apply contact passivation technology to the front side of the battery

Method used

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  • A double-layer passivation film for front contact passivation and preparation method thereof

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Experimental program
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Embodiment 1

[0029] A preparation method for a double-layer passivation film for front contact passivation, said preparation method comprising the following steps:

[0030] (1) Texturing. With the P-type single crystal silicon wafer 1 as the silicon substrate, the texturing treatment is first performed, and the solution used is usually a KOH solution, and the KOH solution is based on KOH: additive: H 2 The ratio of O=20:3:160 is prepared, and the temperature is 80°C. Then wash in 2-5% HF solution to clean the surface of the silicon wafer;

[0031] (2) Phosphorus diffusion. In a conventional phosphorus diffusion furnace tube, a phosphorus diffusion process is performed to form a pn junction 2 . The diffusion temperature is between 700-900 degrees, and the formed sheet resistance ranges from 80-200ohm / □.

[0032] (3) Remove the back knot. First protect the front with water film, in HF / HNO 3 Remove the phosphosilicate glass and the back diffusion layer in the back surface field area in ...

Embodiment 2

[0041] A preparation method for a double-layer passivation film for front contact passivation, said preparation method comprising the following steps:

[0042] (1) Texturing. With the P-type single crystal silicon wafer 1 as the silicon substrate, the texturing treatment is first performed, and the solution used is usually a KOH solution, and the KOH solution is based on KOH: additive: H 2 The ratio of O=20:3:140 is prepared, and the temperature is 80°C. Then wash in 2-5% HF solution to clean the surface of the silicon wafer;

[0043] (2) Phosphorus diffusion. In a conventional phosphorus diffusion furnace tube, a phosphorus diffusion process is performed to form a pn junction 2 . The diffusion temperature is between 700-900 degrees, and the formed sheet resistance ranges from 80-200ohm / □.

[0044] (3) Remove the back knot. First protect the front with water film, in HF / HNO 3 Remove the phosphosilicate glass and the back diffusion layer in the back surface field area in ...

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Abstract

The invention relates to the technical field of solar cells, and particularly relates to a double-layer passivation film for positive contact passivation. The double-layer passivation film is a phosphorus doped SiCx / phosphorus doped polysilicon laminated film. The double-layer passivation film for positive contact passivation in the invention, namely, the phosphorus doped SiCx / phosphorus doped polysilicon laminated film, can greatly reduce the positive light absorption by combining a graphical etching process. During the etching process, the phosphorus doped SiCx film is an excellent etching barrier layer, thereby being capable of protecting a pyramid below the film from being damaged. The passivation area is a tunneling silicon oxide / phosphorus doped SiCx laminated structure after etching, which still can provide effective contact passivation. The SiCx film has less parasitic absorption due to the wide optical band gap. The metal area is a tunneling silicon oxide / phosphorus doped SiCx / thick polysilicon film, thereby being capable of ensuring the avoidance of burn through by slurry during the sintering process.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a double-layer passivation film used for front contact passivation. Background technique [0002] PERC cells have gradually become mainstream products in the photovoltaic industry. Aluminum oxide Al is used on the back of PERC cells 2 o 3 Passivation can effectively reduce the recombination of the back surface, increase the open circuit voltage, increase the reflection of the back surface, and increase the short-circuit current, thereby improving battery efficiency. After rear passivation is adopted, compared with all-aluminum back field cells, the biggest factor limiting the efficiency of PERC cells is no longer the recombination of the back surface, but the recombination of the front surface of the cell. At present, PERC cells often use a selective emitter structure on the front side to reduce recombination, but the reduction is limited. Contact passivation technology i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02167H01L31/1804Y02E10/547Y02P70/50
Inventor 袁声召陈桂栋崔艳峰万义茂黄强林海峰
Owner RISEN ENERGY (CHANGZHOU) CO LTD
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