Flash memory structure and manufacturing method thereof

Abstract

The invention discloses a flash memory structure and a manufacturing method thereof. Active areas are defined in a substrate, the active areas comprise a first active area and a second active area, and the first active area and the second active area are mutually vertically distributed; a gate structure is formed on the substrate, the gate structure is positioned on two parallel sides of the second active area, and a part of the first active area is covered with the gate structure; an ion implantation technology is carried out on the substrate by using the gate structure as a mask, and a source electrode is formed on one side of the gate structure in the active areas. The source electrode in the flash memory structure is formed through the manufacturing method, a photomask technology can be reduced, and harmful effects of the photomask technology on the gate structure can also be avoided. Therefore, according to the flash memory structure formed through the manufacturing method, the performance of the flash memory can be improved, the production cost is reduced, and the competitive force is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a flash memory structure and a manufacturing method thereof. Background technique [0002] Flash memory has become a research hotspot in non-volatile memory due to its convenience, high storage density, and good reliability. The flash memory structure generally includes a memory cell (Memory cell) for storing data, and the memory cell includes a gate structure and source electrodes and drain electrodes located on both sides of the gate structure. [0003] However, the source electrode manufacturing method of the traditional flash memory structure is to use a self-aligned source (SAS) method to define the region of the source electrode, etch, and ion implantation to form the source electrode by using a self-aligned source (SAS) method after forming the gate structure. This method will cause some adverse effects on the gate structure, thereby reducing the perfo...

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Problems solved by technology

[0003] However, the source electrode manufacturing method of the traditional flash memory structure is to use a self-aligned source (SAS) method to define the region of the source electrode with a photomask, etch, and ion implantation to form the source electrode after forming the gate structure. This method will cause some adverse effects on the gate structure, thereby reducing the performance of the entire flash memory structure

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