Oxide film transistor and manufacturing method thereof

Abstract

The invention discloses an oxide film transistor and a manufacturing method thereof. The manufacturing method comprises sequentially forming a grid electrode, a grid electrode insulating layer and an oxide semiconductor film layer; sequentially forming a first metal layer and a second metal layer on the oxide semiconductor film layer, and forming a drain electrode and a source electrode on the second metal layer, wherein the source electrode and the drain electrode are separated through a channel which exposes a part of the first metal layer; oxidizing the exposed part of first metal layer; forming an insulating passivation layer and setting a contact electrode. The manufacturing method of the oxide film transistor can protect the back channel of the oxide film transistor and meanwhile simplify the manufacturing process and save the cost.

Description

technical field [0001] The invention relates to the field of field display, in particular to an oxide thin film transistor and a manufacturing method thereof. Background technique [0002] With the development of flat panel displays represented by liquid crystal LCDs and organic light emitting diodes (OLEDs) toward large size and high resolution, thin-film transistors (TFTs), as the core components of the flat panel display industry, have also received widespread attention. [0003] Commonly used thin film transistors in the prior art include amorphous silicon thin film transistors and oxide thin film transistors. Oxide thin film transistors have the advantages of high carrier mobility, and there is no need to greatly change the existing liquid crystal panel production lines when they are introduced. And has been widely used. [0004] The oxide thin film transistor includes two structures of top gate and bottom gate, and the bottom gate structure mainly adopts two structure...

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Problems solved by technology

However, it is easy to cause damage to the back channel when etching the source / drain electrodes or depositing a passivation layer. For example, if dry etching is used, when the source and drain electrodes are formed by dry etching, the plasma formed by the etching gas will Bombard the back channel, and the plasma bombardment will cause more defects in the back channel, which will affect the normal use of the thin film transistor; if wet etching is used, when the source and drain electrodes are formed by wet etching, the etchant will have a negative effect. Corrosion of the source layer oxide will damage the back channel, and the characteristics of the oxide thin film transistor will be affected

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