532results about How to "Increase repulsion" patented technology

A sheet member including inorganic fibers, the sheet member having multiple inter-woven points formed on at least either a surface or a back side of the sheet member by a needling process, wherein a density ρ of the inter-woven points is in a range about 0.5 number / cm2≦ρ<about 20 number / cm2.

A golf club has a shaft, and a head of a hollow structure fixed to an end of the shaft to be set to have a predetermined lie angle and a predetermined loft angle with respect to a reference horizontal plane. The head has a face portion which includes a ball hitting surface by which a ball is hit, a crown portion, a side portion, and a sole portion. A rib is provided at a part, which is lower than a central part of the face portion, on an inner surface of the face portion to protrude toward the center of the head.

An object of this invention is to provide such a welded structure of and welding method for two metallic parts fitted together at a tubular section in a high-pressure fuel supply pump, that enables rapid joining of both metallic parts by staking (press-fitting included), screw fastening, and / or laser welding, offers high welding strength and sufficient fluid sealability, and keeps the metallic materials free from thermal changes in composition. While an electric current is supplied to any one of the welding connection surfaces formed between a pump housing and cylinder in a high-pressure fuel supply pump, between the pump housing and an installation flange, between the pump housing and an intake or discharge joint, between the pump housing and a pulsation-absorbing damper cover, between the pump housing and a relief valve mechanism, and between the pump housing and an electromagnetically driven intake valve mechanism, the particular two sections are pressed against each other to generate, along the connection surface, a plastic flow not causing melting or fusion due to heat, and form a diffusion-weld region at the connection surface by using the plastic flow and the application of the pressure.

A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).