A magnetic tunnel junction is formed by forming a first iridium lay, a first tungsten layer, a first ferromagnetic metal layer, a tunneling barrier layer, a second ferromagnetic metal layer, a secondtungsten layer, and a second iridium layer. The two ferromagnetic metal layers are a reference layer and a free layer respectively. The magnetization direction of the reference layer is fixed and cannot be reversed; The magnetization direction of the free layer can be reversed. When the magnetization direction of the reference layer is parallel to that of the free layer, the magnetoresistive device exhibits a low resistance state and stores '0' in the binary system; When the magnetization direction of the reference layer is antiparallel to that of the free layer, the magnetoresistive device exhibits a high resistance state, storing a '1' in binary. The invention can generate high tunneling magnetoresistive rate, improve read reliability of magnetic tunnel junction, and reduce device writepower consumption at the same time.