32results about How to "Improve composite luminous efficiency" patented technology

The invention discloses a transverse zinc oxide nanorod array light emitting diode. The transverse zinc oxide nanorod array light emitting diode comprises a sapphire substrate (101), a silicon dioxide insulating layer (102) and a gallium nitride buffer layer (103) which are sequentially arranged from bottom to top. A p-region electrode (106) is arranged on one lateral side of a rectangular etching groove in the gallium nitride buffer layer (103), a piece of blocky n<+>-ZnO (104) is arranged on the other lateral side, opposite to the lateral side, of the rectangular etching groove, and an n-region electrode (105) of an ITO-ZnO film is arranged on the blocky n<+>-ZnO (104). The transverse zinc oxide nanorod array light emitting diode further comprises a ZnO nanorod array (107), an n-type region and a p-type region are arranged at the two ends of the ZnO nanorod array respectively, and meanwhile the ZnO nanorod array is connected with the p-region electrode (106) and the blocky n<+>-ZnO (104) through the p-type region and the n-type region respectively. The transverse zinc oxide nanorod array light emitting diode is high in both light extraction efficiency and electron injection efficiency and meanwhile low in cost.

The invention discloses a gallium nitride-based light-emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of semiconductors. A gallium nitride-based light-emitting diode comprises a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer; the N-type semiconductor layer, the active layer and the P-type semiconductorlayer are sequentially stacked on the substrate; the active layer comprises a plurality of periodic structures which are stacked in sequence, wherein each periodic structure comprises quantum wells and quantum barriers which are stacked in sequence; and the periodic structure further comprises a plurality of metal nanoparticles laid between the quantum wells and the quantum barriers. The pluralityof metal nanoparticles are laid on the surfaces of the quantum wells, and electrons injected into the active layer, electrons in the quantum wells, and photons generated by hole recombination react with each other on the surfaces of the metal nanoparticles, so that the plurality of metal nanoparticles play a role of surface plasmon polariton, the composite light-emitting efficiency of electrons and holes in the quantum wells can be increased, and the light-emitting efficiency of the whole LED is improved.

The invention discloses a gallium nitride-based light emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of semiconductors. The gallium nitride-based light emitting diode epitaxial wafer comprises a substrate, a buffer layer, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, and the buffer layer, the N-type semiconductor layer, the active layer, and the P-type semiconductor layer are sequentially stacked on the substrate; the active layer comprises a plurality of quantum wells and a plurality of quantum barriers,and the plurality of quantum wells and the plurality of quantum barriers are alternately stacked; and at least one boron hydride layer is inserted into the quantum barrier. According to the epitaxialwafer and the preparation method in the invention, at least one boron hydride layer is inserted into the quantum barrier, and the thermal conductivity of the boron hydride layer is good, so the heat generated by combined luminescence of electrons and holes in the active layer can be conducted out in time to prevent the junction temperature of the active layer from rising, thereby facilitating theimprovement of combined luminous efficiency of the electrons and holes, and further improving the luminous efficiency of the LED, and the gallium nitride-based light emitting diode epitaxial wafer isparticularly suitable for LEDs at a high current density.

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, belonging to the technical field of semiconductors. The light-emitting diode epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer, and the P-type semiconductor layer are sequentially stacked on the substrate above; the active layer includes a plurality of composite structures stacked in sequence, and each composite structure includes a well layer and a barrier layer stacked in sequence; the material of the well layer is undoped indium gallium nitride, and the The material of the barrier layer is undoped gallium nitride; the composite structure also includes a transition layer, and the transition layer is arranged between the well layer and the barrier layer; the transition layer includes first sublayers stacked in sequence and the second sublayer, the material of the first sublayer is undoped aluminum indium nitride, and the material of the second sublayer is undoped aluminum nitride. The invention can improve the photoelectric performance of the LED.