A gallium nitride-based light-emitting diode epitaxial wafer and its preparation method

Abstract

The invention discloses a gallium nitride-based light emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of semiconductors. The gallium nitride-based light emitting diode epitaxial wafer comprises a substrate, a buffer layer, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, and the buffer layer, the N-type semiconductor layer, the active layer, and the P-type semiconductor layer are sequentially stacked on the substrate; the active layer comprises a plurality of quantum wells and a plurality of quantum barriers,and the plurality of quantum wells and the plurality of quantum barriers are alternately stacked; and at least one boron hydride layer is inserted into the quantum barrier. According to the epitaxialwafer and the preparation method in the invention, at least one boron hydride layer is inserted into the quantum barrier, and the thermal conductivity of the boron hydride layer is good, so the heat generated by combined luminescence of electrons and holes in the active layer can be conducted out in time to prevent the junction temperature of the active layer from rising, thereby facilitating theimprovement of combined luminous efficiency of the electrons and holes, and further improving the luminous efficiency of the LED, and the gallium nitride-based light emitting diode epitaxial wafer isparticularly suitable for LEDs at a high current density.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Gallium nitride (GaN) has good thermal conductivity, and has excellent characteristics such as high temperature resistance, acid and alkali resistance, and high hardness, so that gallium nitride (GaN)-based LEDs have received more and more attention and research. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the buffer layer, the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentiall...

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Problems solved by technology

[0006] The embodiment of the present invention provides a gallium nitride-based light-emitting diode epitaxial wafer and its preparation method, which can solve the problem in the prior art that the increase in junction temperature reduces the recombination luminous efficiency of electrons and holes, thereby affecting the luminous efficiency of LEDs.

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