A memory device and method of performing a write operation in such a memory device are provided. The memory device comprises a
memory array having a plurality of memory cells, and a plurality of word lines and a plurality of bit lines via which the plurality of memory cells are accessed. Write driver circuitry is responsive to a write request to write data into at least one
memory cell during a
programming interval by altering
voltage on at least one of the bit lines connected to that at least one
memory cell while one of the word lines connected to the at least one
memory cell is selected, to cause a value indicative of the data to be stored in the at least one memory
cell. At a start of the
programming interval the at least one
bit line is at a first
voltage, and the write driver circuitry comprises first
coupling circuitry responsive to the write request to couple the at least one
bit line to a second
voltage to cause the voltage on that at least one
bit line to transition towards the second voltage. The first and second voltages represent the operating voltages of the memory cells. Further, additional
coupling circuitry is provided which is triggered at a predetermined time during the
programming interval to cause the at least one bit line to transition beyond the second voltage towards a third voltage. It has been found that such an approach significantly improves the writeability of memory cells within a memory device arranged to operate at low supply voltages.