Being suitable to etching copper or silver, the etching apparatus includes hydrogen dioxide trough, ammonium hydroxide trough, water trough, etch trough, pipe arrangement system, and temperature control device. The pipe arrangement system connects hydrogen dioxide trough, ammonium hydroxide trough, and water trough to the etch trough. Being setup around hydrogen dioxide trough, ammonium hydroxide trough, and etch trough, the temperature control device maintains temperature lower than room temperature and higher than 12 deg.C. The invention can prevent air cock from occurring inside pipe arrangement system, and can reduce volatilization speed of hydrogen dioxide and ammonium hydroxide. Thus, the etching solution maintains stable etching speed for thin film of copper or silver.