Etching apparatus and technology thereof

Abstract

Being suitable to etching copper or silver, the etching apparatus includes hydrogen dioxide trough, ammonium hydroxide trough, water trough, etch trough, pipe arrangement system, and temperature control device. The pipe arrangement system connects hydrogen dioxide trough, ammonium hydroxide trough, and water trough to the etch trough. Being setup around hydrogen dioxide trough, ammonium hydroxide trough, and etch trough, the temperature control device maintains temperature lower than room temperature and higher than 12 deg.C. The invention can prevent air cock from occurring inside pipe arrangement system, and can reduce volatilization speed of hydrogen dioxide and ammonium hydroxide. Thus, the etching solution maintains stable etching speed for thin film of copper or silver.

Description

technical field [0001] The present invention relates to an etching device, and in particular to an etching device with a high and stable etching rate. Background technique [0002] In the semiconductor manufacturing process, the etching process is used to remove the film not covered by the photoresist layer or mask layer by chemical reaction or physical action, so that the pattern on the photomask can be transferred onto the film. In addition, if it is desired to remove the entire film, an etching process can also be used to complete it. At present, the etching technology used in the semiconductor manufacturing process can be mainly divided into two types: dry etching and wet etching. Among them, dry etching mainly uses electron beam ablation to form thin films. Etching, while wet etching mainly uses the chemical reaction between the etchant and the film to etch the film. [0003] Copper (Cu) and silver (Ag) are conductive materials often used in semiconductor devices. A...

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Problems solved by technology

Such gas embolism will lead to difficulty in extracting hydrogen peroxide or ammonium hydroxide, thereby affecting the operational reliability of known etching equipment

In addition, during the mixing process, hydrogen peroxide or ammonium hydroxide will also volatilize under the influence of room temperature, resulting in changes in the concentration of the etching solution, making the etching rate of the etching solution on copper or silver films unstable.

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